公开(公告)号：US20190212653A1

公开(公告)日：2019-07-11

申请号：US16231659

申请日：2018-12-24

Applicant: Tokyo Electron Limited

Inventor： Teruhiko KODAMA ,  Koichi MATSUNAGA

IPC: G03F7/34 ,  H01L21/027 ,  H01L21/677 ,  H01L21/683 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/34 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  H01L21/0274 ,  H01L21/6773 ,  H01L21/6833

Abstract: A substrate treatment apparatus for applying a coating solution to a front surface of a substrate and developing an exposed coating film on the front surface of the substrate, includes a film forming unit configured to form a friction reducing film on a rear surface of the substrate before exposure processing, the friction reducing film reducing friction between the rear surface of the substrate and a holding surface for holding the rear surface of the substrate in the exposure processing.

公开(公告)号：US20210232050A1

公开(公告)日：2021-07-29

申请号：US17155586

申请日：2021-01-22

Applicant: Tokyo Electron Limited

Inventor： Koichi MATSUNAGA

IPC: G03F7/20 ,  G03F7/16 ,  G03F7/36 ,  G03F7/38 ,  C09D127/16 ,  B05D1/00 ,  B05D5/08 ,  B05D3/06

Abstract: A substrate processing apparatus includes a hydrophobizing part configured to perform a hydrophobizing process of forming a hydrophobic film on a front surface of a substrate through vapor deposition of a hydrophobizing gas, an ultraviolet radiation part configured to radiate ultraviolet rays to a removal area on a rear surface of the substrate so as to remove the hydrophobic film formed in the removal area in the hydrophobizing process, and a resin-film forming part configured to form a fluororesin film in the removal area after the hydrophobic film is removed.

公开(公告)号：US20240189856A1

公开(公告)日：2024-06-13

申请号：US18282025

申请日：2022-03-01

Applicant: Tokyo Electron Limited

Inventor： Teruhiko KODAMA ,  Koichi MATSUNAGA ,  Hideaki IWASAKA

IPC: B05C9/14 ,  B05C15/00 ,  B05D3/02 ,  B05D3/04

CPC classification number: B05C9/14 ,  B05C15/00 ,  B05D3/02 ,  B05D3/0466

Abstract: A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate includes a processing container configured to accommodate the substrate and to define a hermetically-sealed processing space, a heating element configured to heat the rear surface of the substrate inside the processing container, a supplier configured to supply a material forming the friction reducing film toward the rear surface of the substrate inside the processing container, a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate, a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing, and an exhauster configured to exhaust an atmosphere of the processing space from a periphery or a space below the substrate.

公开(公告)号：US20210317579A1

公开(公告)日：2021-10-14

申请号：US17272884

申请日：2019-08-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi MATSUNAGA

IPC: C23C16/52 ,  H01L21/02

Abstract: A method includes: supporting a rear surface of a substrate with a front surface thereof oriented upward to form a gap between the rear surface and a guide surface facing the rear surface; exhausting the gas outward of the substrate; and forming a thin film on the rear surface through vapor deposition by supplying a raw material gas from a side of the guide surface into the gap via a gas ejection port and heating the gas. The method has at least one of conditions including (a) the forming includes changing, during film formation, a height of the gap from one of a first value and a second value smaller than the first value to the other, and (b) the forming includes changing, during film formation, a ratio of flow rates of the gas ejected from first and second gas ejection ports formed at different radial positions on the substrate.