公开(公告)号：US20250050377A1

公开(公告)日：2025-02-13

申请号：US18789854

申请日：2024-07-31

Applicant: Tokyo Electron Limited

Inventor： Teruhiko KODAMA

IPC: B05D5/08 ,  B05C5/02 ,  B05C15/00 ,  B05D1/00

Abstract: A hydrophobization treatment apparatus for performing a hydrophobization treatment on a substrate, includes: a treatment container configured to house the substrate and form a treatment space; a first supply port configured to supply first gas from above the substrate in the treatment container to the substrate; and a second supply port configured to supply second gas from a position facing a central region of the substrate below the substrate in the treatment container to the substrate, the hydrophobization treatment apparatus being configured to be able to supply a hydrophobizing gas as the first gas from the first supply port and the second gas from the second supply port.

公开(公告)号：US20190212653A1

公开(公告)日：2019-07-11

申请号：US16231659

申请日：2018-12-24

Applicant: Tokyo Electron Limited

Inventor： Teruhiko KODAMA ,  Koichi MATSUNAGA

IPC: G03F7/34 ,  H01L21/027 ,  H01L21/677 ,  H01L21/683 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/34 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  H01L21/0274 ,  H01L21/6773 ,  H01L21/6833

Abstract: A substrate treatment apparatus for applying a coating solution to a front surface of a substrate and developing an exposed coating film on the front surface of the substrate, includes a film forming unit configured to form a friction reducing film on a rear surface of the substrate before exposure processing, the friction reducing film reducing friction between the rear surface of the substrate and a holding surface for holding the rear surface of the substrate in the exposure processing.

公开(公告)号：US20240189856A1

公开(公告)日：2024-06-13

申请号：US18282025

申请日：2022-03-01

Applicant: Tokyo Electron Limited

Inventor： Teruhiko KODAMA ,  Koichi MATSUNAGA ,  Hideaki IWASAKA

IPC: B05C9/14 ,  B05C15/00 ,  B05D3/02 ,  B05D3/04

CPC classification number: B05C9/14 ,  B05C15/00 ,  B05D3/02 ,  B05D3/0466

Abstract: A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate includes a processing container configured to accommodate the substrate and to define a hermetically-sealed processing space, a heating element configured to heat the rear surface of the substrate inside the processing container, a supplier configured to supply a material forming the friction reducing film toward the rear surface of the substrate inside the processing container, a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate, a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing, and an exhauster configured to exhaust an atmosphere of the processing space from a periphery or a space below the substrate.

公开(公告)号：US20180253007A1

公开(公告)日：2018-09-06

申请号：US15760206

申请日：2016-08-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Teruhiko KODAMA ,  Masashi ENOMOTO ,  Masahide TADOKORO ,  Takafumi HASHIMOTO

IPC: G03F7/16 ,  G01B11/02 ,  H01L21/66 ,  H01L21/02 ,  H01L21/027 ,  G03F7/11

CPC classification number: G03F7/162 ,  B05C9/14 ,  B05C11/08 ,  G01B11/022 ,  G01B11/06 ,  G01B11/2433 ,  G03F7/11 ,  G03F7/168 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67288 ,  H01L21/67742 ,  H01L21/67766 ,  H01L21/681 ,  H01L22/12 ,  H01L22/20

Abstract: A substrate processing method, includes acquiring a height distribution along a radial direction of a substrate in a peripheral edge portion of a front surface of the substrate, forming an underlayer film on the entire front surface of the substrate so as to correct a drop of a height of the peripheral edge portion based on the height distribution, and forming a resist film on the entire surface of the underlayer

公开(公告)号：US20210039221A1

公开(公告)日：2021-02-11

申请号：US16977935

申请日：2019-02-26

Applicant: Tokyo Electron Limited

Inventor： Nozomu KANETAKE ,  Akihiro KUBO ,  Teruhiko KODAMA ,  Taro YAMAMOTO ,  Yasushi TAKIGUCHI ,  Yoshiki OKAMOTO ,  Hayato HOSAKA

IPC: B24B7/22 ,  H01L21/67 ,  B24B19/02 ,  B24B41/047

Abstract: A substrate warpage correction method according to this disclosure corrects warpage of a substrate without performing a process on a front surface of the substrate. The substrate warpage correction method includes a surface roughening of performing a surface roughening process on a rear surface of the substrate using a surface roughening processing apparatus configured to be able to perform the surface roughening process on the rear surface of the substrate, to form grooves in the rear surface to thereby correct the warpage of the substrate.

公开(公告)号：US20180151343A1

公开(公告)日：2018-05-31

申请号：US15824274

申请日：2017-11-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasushi TAKIGUCHI ,  Taro YAMAMOTO ,  Yoshiki OKAMOTO ,  Hayato HOSAKA ,  Teruhiko KODAMA ,  Akihiro KUBO ,  Ryuto OZASA ,  Yuji ARIUCHI ,  Shinsuke KIMURA

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  G03F7/20

CPC classification number: H01L21/02016 ,  G03F7/70691 ,  H01L21/0209 ,  H01L21/67046 ,  H01L21/67219 ,  H01L21/67225 ,  H01L21/67288 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68764 ,  H01L21/68792

Abstract: A substrate processing apparatus includes: a first holding part configured to hold a substrate; a second holding part configured to hold the substrate; a sliding member configured to rotate about a vertical axis so that the sliding member slides on a back surface of the substrate; a revolution mechanism configured to revolve the sliding member under rotation about a vertical revolution axis; and a relative movement mechanism configured to horizontally move a relative position between the substrate and a revolution trajectory of the sliding member so that when the substrate is held by the first holding part, the sliding member slides on a central portion of the back surface of the substrate, and when the substrate is held by the second holding part, the sliding member slides on the peripheral portion of the back surface of the substrate under rotation.

公开(公告)号：US20170092504A1

公开(公告)日：2017-03-30

申请号：US15267183

申请日：2016-09-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro KUBO ,  Teruhiko KODAMA

IPC: H01L21/304 ,  B24B37/20 ,  H01L21/308 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/304 ,  B24B37/20 ,  H01L21/02052 ,  H01L21/0274 ,  H01L21/3043 ,  H01L21/3086 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/67219 ,  H01L21/68728 ,  H01L21/68742 ,  H01L21/6875

Abstract: There is provided a substrate processing method which includes polishing a rear surface of a substrate before a pattern exposure such that the rear surface is subjected to a roughening treatment; and bypassing a roughness alleviating treatment with respect to the polished rear surface of the substrate.

公开(公告)号：US20230197475A1

公开(公告)日：2023-06-22

申请号：US18084063

申请日：2022-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Teruhiko KODAMA ,  Yuzo OHISHI ,  Yoshitaka MATSUDA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/67778 ,  H01L21/67796 ,  H01L21/68742

Abstract: A substrate processing apparatus includes: a substrate holder configured to hold a substrate while being locally superimposed on a back surface of the substrate; a light irradiator configured to irradiate the back surface with light so as to remove an organic substance on the back surface of the substrate; a light shielding member provided at a back side of the substrate while being spaced apart from the back surface so as to prevent the light from being supplied to a front surface of the substrate; and a holding position changing mechanism configured to change a holding position by the substrate holder on the back surface of the substrate so as to irradiate the entire back surface of the substrate with the light.

公开(公告)号：US20200096966A1

公开(公告)日：2020-03-26

申请号：US16696405

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Teruhiko KODAMA ,  Masashi ENOMOTO

IPC: G05B19/406 ,  H01L21/677 ,  H01L21/67 ,  G05B23/02 ,  H01L21/302 ,  H01L21/66 ,  G05B19/418

Abstract: A substrate processing apparatus includes a film-forming device that forms a photosensitive film on a front surface of a substrate, a warping data acquisition device that acquires measured warping data of the substrate, a roughening process device that applies roughening process on a back surface of the substrate, and a control device including circuitry that controls the warping data acquisition device such that after the photosensitive film is formed on the front surface of the substrate, the warping data acquisition device acquires the measured warping data before the photosensitive film on the substrate undergoes exposure process, and control the roughening process device such that before the photosensitive film on the substrate undergoes the exposure process, the roughening process device applies the roughening process on the back surface of the substrate based on the measured warping data.

公开(公告)号：US20180019112A1

公开(公告)日：2018-01-18

申请号：US15716663

申请日：2017-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akiko KAI ,  Takafumi NIWA ,  Shogo TAKAHASHI ,  Hiroshi NISHIHATA ,  Yuichi TERASHITA ,  Teruhiko KODAMA

IPC: H01L21/02 ,  H01L21/033 ,  G03F7/30 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67051 ,  G03F7/3021 ,  H01L21/0206 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68742

Abstract: A liquid processing apparatus for liquid-processing a substrate includes a substrate holding device that rotates a substrate in horizontal position, a nozzle holding device holding processing liquid and gas nozzles, the liquid nozzle discharging processing liquid from a discharge port such that the liquid is discharged obliquely to surface of the substrate, the gas nozzle discharging gas perpendicularly to the surface of the substrate, a moving device that moves the nozzle device with respect to the surface of the substrate, and a control device including circuitry that controls the nozzle, substrate and moving devices such that while the substrate is rotated, the liquid is discharged to peripheral portion toward downstream side in rotation direction and along tangential direction of the substrate and gas is discharged from the gas nozzle toward position adjacent to liquid landing position of the liquid on the surface and is on center side of the substrate.