公开(公告)号：US20240213093A1

公开(公告)日：2024-06-27

申请号：US18145582

申请日：2022-12-22

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Hiroak Niimi ,  Robert D. Clark ,  Tadahiro Ishizaka

IPC: H01L21/768

CPC classification number: H01L21/76879

Abstract: A method for processing a substrate that includes: treating the substrate with a halogen-containing catalyst, the substrate including a semiconductor layer, a dielectric layer disposed over the semiconductor layer, a recess formed in the dielectric layer, and a layer of a first metal disposed between the dielectric layer and the semiconductor layer, the layer of the first metal being at a bottom of the recess, the halogen-containing catalyst modifying a surface of the layer of the first metal; after treating the substrate with the halogen-containing catalyst, treating the substrate with a molecular inhibitor (MI), the MI covering sidewalls of the dielectric layer in the recess; depositing a second metal over the modified surface of the layer of the first metal in the recess, where the MI covering the sidewalls prevents deposition of the second metal on the dielectric layer.