公开(公告)号：US20200328095A1

公开(公告)日：2020-10-15

申请号：US16890332

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiromitsu NAMBA ,  Fitrianto ,  Yoichi TOKUNAGA ,  Yoshifumi AMANO

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/683

Abstract: A substrate processing apparatus includes a substrate holder that holds a substrate in a horizontal direction; a rotation driver that rotates the substrate holder; a first processing liquid nozzle that supplies a first processing liquid to a peripheral portion of the substrate; a first gas supply source that supplies a first gas at a first temperature to the peripheral portion of the substrate; and a second gas supply source that supplies a second gas at a second temperature to an inner side of the substrate in a radial direction. The first gas supply source includes a heater that heats the first gas into the first temperature, and a first gas ejection port that supplies the first gas heated by the heater through a conduit, and the second gas supply source includes a second gas ejection port that supplies the second gas through a gas supply pipe.

公开(公告)号：US20130171831A1

公开(公告)日：2013-07-04

申请号：US13727671

申请日：2012-12-27

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu NAMBA ,  Fitrianto ,  Yoichi TOKUNAGA ,  Yoshifumi AMANO

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67109 ,  H01L21/6838

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract translation: 基板处理装置包括：基板保持单元，被配置为保持基板; 第一处理液喷嘴，被配置为将第一处理液体供应到所述基板的周边部分; 第二处理液喷嘴，被配置为将温度低于第一处理液的第二处理液供给到基板的周边部分; 第一气体供给口，其构造成将第一温度的第一气体供给到所述基板的周边部的第一供气位置; 以及第二气体供给口，被配置为相对于与所述基板相对于所述第一气体供给位置，在比所述第一温度低的第二温度向所述径向中心附近供给第二气体。