公开(公告)号：US20180088466A1

公开(公告)日：2018-03-29

申请号：US15712248

申请日：2017-09-22

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Hiroshi MIZUNOURA

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32

CPC classification number: G03F7/11 ,  B05D1/005 ,  B05D1/32 ,  B05D1/322 ,  B05D1/36 ,  G03F7/0043 ,  G03F7/16 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/3021 ,  G03F7/3057 ,  G03F7/32 ,  G03F7/38 ,  G03F7/70991 ,  H01L21/0274

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

公开(公告)号：US20190332013A1

公开(公告)日：2019-10-31

申请号：US16504448

申请日：2019-07-08

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Hiroshi MIZUNOURA

IPC: G03F7/11 ,  G03F7/30 ,  B05D1/32 ,  G03F7/16 ,  G03F7/004 ,  H01L21/027 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32 ,  B05D1/36 ,  B05D1/00

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

公开(公告)号：US20190317407A1

公开(公告)日：2019-10-17

申请号：US16376192

申请日：2019-04-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi MIZUNOURA ,  Yohei SANO ,  Shinichiro KAWAKAMI

IPC: G03F7/16 ,  C23F1/02

Abstract: There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.