公开(公告)号：US20240331977A1

公开(公告)日：2024-10-03

申请号：US18671410

申请日：2024-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Satoru KAWAKAMI ,  Tsuyoshi MORIYA ,  Tatsuo MATSUDO ,  Jun YAMAWAKU ,  Hiroyuki ONODA

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32174 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A dividing plate has insulating properties, and divides the inside of a processing vessel into a reaction chamber in which a body to be processed is placed, and a plasma generating chamber for generating plasma. Further, the dividing plate is provided, on a surface thereof on the side of the plasma generating chamber, with a first electrode, and a plurality of through holes for supplying active species included in the plasma generated in the plasma generating chamber to the reaction chamber. The second electrode is disposed facing the first electrode in the plasma generating chamber. When plasma is to be generated in the plasma generating chamber, an electric power supply unit supplies either the first electrode or the second electrode with high-frequency electric power in which high-frequency electric power in a plurality of frequencies is superimposed by phase control.

公开(公告)号：US20230033323A1

公开(公告)日：2023-02-02

申请号：US17869362

申请日：2022-07-20

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Yuki OSADA ,  Hiroyuki MIYASHITA ,  Hiroyuki ONODA ,  Satoru KAWAKAMI

IPC: H01J37/32

Abstract: There is provided a plasma source comprising a first chamber configured to form a flat first plasma generation space, and having a first wall and a second wall, a gas supply configured to supply gas into the first chamber, an electromagnetic wave supply having a dielectric window that is provided in an opening provided in the first wall to face the first plasma generation space, and configured to supply an electromagnetic wave through the dielectric window into the first chamber. The plasma source comprises a plasma supply configured to supply radicals contained in plasma that is generated from the gas supplied into the first chamber by the electromagnetic wave to an outside of the first chamber, and a plasma ignition source provided in the first chamber to protrude from an inner wall of the second wall facing the dielectric window and to be separated from the dielectric window.

公开(公告)号：US20220411920A1

公开(公告)日：2022-12-29

申请号：US17756214

申请日：2020-11-10

Applicant: Tokyo Electron Limited

Inventor： Munehito KAGAYA ,  Tadashi MITSUNARI ,  Hiroyuki ONODA

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04 ,  C23C16/505

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus that perform selective film formation. The substrate processing method includes: forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the substrate and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer; and etching the silicon-containing film, wherein the forming the silicon-containing film includes modifying at least one of the adsorption layer and the silicon-containing film by generating a He-containing plasma.

公开(公告)号：US20220165544A1

公开(公告)日：2022-05-26

申请号：US17440613

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Satoru KAWAKAMI ,  Tsuyoshi MORIYA ,  Tatsuo MATSUDO ,  Jun YAMAWAKU ,  Hiroyuki ONODA

IPC: H01J37/32 ,  H01L21/02

Abstract: There is provided a plasma processing device. The plasma processing device comprises: a processing chamber; a partition plate that has an insulating property, and configured to partition a space in the processing chamber into a reaction chamber in which an object to be processed is mounted and a plasma generating chamber in which plasma is generated, wherein a first electrode is provided on a surface of the partition plate on the side of the plasma generating chamber, and the partition plate has a plurality of through holes formed for supplying active species contained in the plasma generated in the plasma generating chamber to the reaction chamber; a second electrode disposed in the plasma generating chamber so as to face the first electrode; and a power supply configured to supply high-frequency power obtained by phase-controlling and superimposing high-frequency powers of a plurality of frequencies to one of the first electrode and the second electrode when the plasma is generated in the plasma generating chamber.