公开(公告)号：US20250087628A1

公开(公告)日：2025-03-13

申请号：US18367315

申请日：2023-09-12

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  David L. O'MEARA ,  Matthew BARON ,  Hojin KIM ,  Arkalgud SITARAM

IPC: H01L23/00

Abstract: A method includes providing a first substrate having a first bonding surface. The method includes providing a second substrate having a second bonding surface. The method includes coupling a metal-containing precursor to the first bonding surface and the second bonding surface. The method includes activating the metal-containing precursor on the first bonding surface and the second bonding surface. The method further includes chemically reacting the activated metal-containing precursor on the first bonding surface and the second bonding surface to form an interface between the first substrate and the second substrate.