公开(公告)号：US20250087628A1

公开(公告)日：2025-03-13

申请号：US18367315

申请日：2023-09-12

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  David L. O'MEARA ,  Matthew BARON ,  Hojin KIM ,  Arkalgud SITARAM

IPC: H01L23/00

Abstract: A method includes providing a first substrate having a first bonding surface. The method includes providing a second substrate having a second bonding surface. The method includes coupling a metal-containing precursor to the first bonding surface and the second bonding surface. The method includes activating the metal-containing precursor on the first bonding surface and the second bonding surface. The method further includes chemically reacting the activated metal-containing precursor on the first bonding surface and the second bonding surface to form an interface between the first substrate and the second substrate.

公开(公告)号：US20220344169A1

公开(公告)日：2022-10-27

申请号：US17724088

申请日：2022-04-19

Applicant: Tokyo Electron Limited

Inventor： Yun HAN ,  David L. O'MEARA ,  Cheryl ALIX ,  Andrew METZ ,  Shan HU ,  Henan ZHANG

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/02

Abstract: A method includes providing a substrate including metal gate stacks and source/drain contact regions in alternating arrangement along a surface of the substrate with a dielectric spacer separating each source/drain contact region from adjacent metal gate stacks. Each source/drain region is recessed within an opening between adjacent metal gate stacks such that source/drain contact regions provide a bottom of the recess and dielectric spacers provide sidewalls. The etch stop layer is formed on the substrate such that it conformally covers the metal gate stacks, the sidewalls and the bottom of each recess, and a sacrificial layer is formed over each of the metal gate stacks and on at least a portion of each sidewall. The etch stop layer is removed from the bottom of each recess to expose the source/drain contact, and the sacrificial layer is then removed from the metal gate stacks and the sidewalls of each recess.