公开(公告)号：US20240363564A1

公开(公告)日：2024-10-31

申请号：US18309678

申请日：2023-04-28

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  Matthew BARON ,  Adam GILDEA

IPC: H01L23/00 ,  H01L25/065 ,  H10B80/00

CPC classification number: H01L24/06 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H10B80/00 ,  H01L2224/03616 ,  H01L2224/0362 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/06505 ,  H01L2224/08146 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/1431 ,  H01L2924/1434

Abstract: At least one aspect of the present disclosure is directed to a semiconductor device. The semiconductor device includes a first substrate including a first area and a second area; a second substrate including a third area and a fourth area; a first bonding layer comprising a first dielectric material that bonds the first area to the third area; and a second bonding layer comprising a second dielectric material that bonds the second area to the fourth area. The first dielectric material is different from the second dielectric material.

公开(公告)号：US20200006129A1

公开(公告)日：2020-01-02

申请号：US16562207

申请日：2019-09-05

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  Jeffrey SMITH ,  Gerrit J. LEUSINK ,  Robert D. CLARK ,  Kai-Hung YU

IPC: H01L21/768 ,  H01L23/522

Abstract: A semiconductor device is provided. The semiconductor device can have a substrate including dielectric material. A plurality of narrow interconnect openings can be formed within said dielectric material. In addition, a plurality of wide interconnect openings can be formed within said dielectric material. The semiconductor device can include a first metal filling the narrow interconnect openings to form an interconnect structure and conformally covering a surface of the wide interconnect openings formed in the dielectric material, and a second metal formed over the first metal and encapsulated by the first metal to form another interconnect structure within the wide interconnect openings.

公开(公告)号：US20250087628A1

公开(公告)日：2025-03-13

申请号：US18367315

申请日：2023-09-12

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  David L. O'MEARA ,  Matthew BARON ,  Hojin KIM ,  Arkalgud SITARAM

IPC: H01L23/00

Abstract: A method includes providing a first substrate having a first bonding surface. The method includes providing a second substrate having a second bonding surface. The method includes coupling a metal-containing precursor to the first bonding surface and the second bonding surface. The method includes activating the metal-containing precursor on the first bonding surface and the second bonding surface. The method further includes chemically reacting the activated metal-containing precursor on the first bonding surface and the second bonding surface to form an interface between the first substrate and the second substrate.

公开(公告)号：US20180211870A1

公开(公告)日：2018-07-26

申请号：US15875442

申请日：2018-01-19

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  Jeffrey SMITH ,  Gerrit J. LEUSINK ,  Robert D. CLARK ,  Kai-Hung YU

IPC: H01L21/768 ,  H01L23/522

Abstract: A semiconductor device is provided. The semiconductor device can have a substrate including dielectric material. A plurality of narrow interconnect openings can be formed within said dielectric material. In addition, a plurality of wide interconnect openings can be formed within said dielectric material. The semiconductor device can include a first metal filling the narrow interconnect openings to form an interconnect structure and conformally covering a surface of the wide interconnect openings formed in the dielectric material, and a second metal formed over the first metal and encapsulated by the first metal to form another interconnect structure within the wide interconnect openings.