公开(公告)号：US20250054904A1

公开(公告)日：2025-02-13

申请号：US18797894

申请日：2024-08-08

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Kevin RYAN ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/3205

Abstract: A method of processing a substrate that includes: forming an infrared (IR) absorbing separation layer over a first substrate; forming one or more layers over the IR absorbing separation layer; bonding the first substrate and a second substrate at a bonding interface between the one or more layers and the second substrate using a direct bonding technique to form a wafer stack; exposing the wafer stack to an infrared (IR) light irradiation to separate the first substrate from the one or more layers.

公开(公告)号：US20250087628A1

公开(公告)日：2025-03-13

申请号：US18367315

申请日：2023-09-12

Applicant: Tokyo Electron Limited

Inventor： Soo Doo CHAE ,  David L. O'MEARA ,  Matthew BARON ,  Hojin KIM ,  Arkalgud SITARAM

IPC: H01L23/00

Abstract: A method includes providing a first substrate having a first bonding surface. The method includes providing a second substrate having a second bonding surface. The method includes coupling a metal-containing precursor to the first bonding surface and the second bonding surface. The method includes activating the metal-containing precursor on the first bonding surface and the second bonding surface. The method further includes chemically reacting the activated metal-containing precursor on the first bonding surface and the second bonding surface to form an interface between the first substrate and the second substrate.

公开(公告)号：US20250079166A1

公开(公告)日：2025-03-06

申请号：US18786164

申请日：2024-07-26

Applicant: Tokyo Electron Limited

Inventor： Panupong JAIPAN ,  Matthew BARON ,  Kandabara TAPILY ,  Ilseok SON ,  Arkalgud SITARAM ,  Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Yoshihiro TSUTSUMI ,  Yoshihiro KONDO

IPC: H01L21/02 ,  H01L21/306

Abstract: Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first device structure on a first substrate, a first laser liftoff layer on the first device structure, a protective layer on the first laser liftoff layer, and a second substrate on the protective layer. The method includes de-attaching, through applying radiation on the first laser liftoff layer, the protective layer from the first laser liftoff layer, with a first surface of the second substrate remaining in contact with a second surface of the protective layer. The protective layer is transparent to the radiation.

公开(公告)号：US20240387448A1

公开(公告)日：2024-11-21

申请号：US18419733

申请日：2024-01-23

Applicant: Tokyo Electron Limited

Inventor： Francisco MACHUCA ,  James S. PAPANU ,  Xinkang TIAN ,  Arkalgud SITARAM

IPC: H01L23/00 ,  G01N23/04 ,  G01N23/083 ,  G01N23/18 ,  H01L21/66 ,  H01L21/67

Abstract: A hybrid bonding apparatus includes a hybrid bonder that has a bonder head and is configured to bond a first semiconductor structure to a second semiconductor structure via hybrid bonding. The hybrid bonding apparatus also includes an X-ray probe having an X-ray source and a detector. The bonder head is positioned in a measurement gap between the X-ray source and the detector or positioned in a measurement space opposite to both the X-ray source and the detector. The X-ray probe is configured to irradiate X-rays through the first semiconductor structure and the second semiconductor structure, in whole or in part, to measure relative positions of the first semiconductor structure and the second semiconductor structure. The hybrid bonder is configured to align the first semiconductor structure and the second semiconductor structure based on the relative positions of the first semiconductor structure and the second semiconductor structure.