公开(公告)号：US20150064917A1

公开(公告)日：2015-03-05

申请号：US14465933

申请日：2014-08-22

Applicant: Tokyo Electron Limited

Inventor： Mark Somervell ,  Ian Brown ,  Ihsan Simms ,  Ainhoa Negreira ,  Kathleen Nafus

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/02

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 nm.

Abstract translation: 公开了一种处理方法，其通过允许在DSA模板中形成改进的引导条来实现改进的定向自组装（DSA）处理方案，其可以使得能够在衬底上形成亚-30nm特征。 可以通过改善不同有机层或膜之间的湿化学处理的选择性来形成改进的引导条。 在一个实施方案中，用一个或多个紫外光波长处理有机层可提高选择性。 UV光的第一波长可以小于200nm，UV光的第二波长可以大于200nm。

公开(公告)号：US20170345665A1

公开(公告)日：2017-11-30

申请号：US15604345

申请日：2017-05-24

Applicant: Tokyo Electron Limited

Inventor： Jacques FAGUET ,  Trace Hurd ,  Ian Brown

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01L21/31122

Abstract: A processing apparatus includes a processing chamber having a substrate holder; a first gas delivery system configured to deliver a first source gas within the processing chamber; a second gas delivery system configured to deliver a second source gas within the processing chamber; an energy activation system; and processing circuitry. The processing circuitry is configured to control first processing parameters for delivery of the first source gas, control second processing parameters for delivery of the second source gas, control processing chamber parameters and energy activation system parameters to cause a reaction of the first source gas and the second source gas with a surface of one or more parts in the processing chamber to etch an atomic layer from the surface of the one or more parts in absence of a plasma, and control vacuum system parameters for removal of one or more reaction gases from the processing chamber.