公开(公告)号：US20180315612A1

公开(公告)日：2018-11-01

申请号：US15964130

申请日：2018-04-27

Applicant: Tokyo Electron Limited

Inventor： Kathleen Nafus ,  Serge Biesemans

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31138 ,  H01L29/66545

Abstract: Techniques herein include methods for selectively modifying chemical properties of organosilicates including periodic mesoporous organosilicates (PMOs) in situ for use in fabrication of semiconductor devices. With techniques herein, such materials are manipulated in their chemical properties after deposition and can accordingly be used as sacrificial patterning films and/or as patterning enabling materials. Using selective treatments such as annealing, curing, plasma exposure, and silylation, chemical properties such as etch resistance and hydrophobicity can be changed to enable a given patterning operation. A given film can be etch resistant for one patterning operation, and then changed to be etch removable for a subsequent patterning operation.

公开(公告)号：US11538684B2

公开(公告)日：2022-12-27

申请号：US16671564

申请日：2019-11-01

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Ian J. Brown ,  Ihsan Simms ,  Ainhoa Negreira ,  Kathleen Nafus

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  B81C1/00 ,  G03F7/00 ,  G03F7/42 ,  G03F7/40

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

公开(公告)号：US20150170903A1

公开(公告)日：2015-06-18

申请号：US14570865

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Ainhoa Romo Negreira ,  Kathleen Nafus ,  Yuhei Kuwahara ,  Koichi Matsunaga

IPC: H01L21/027

CPC classification number: H01L21/02126 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105

Abstract: This disclosure relates to a processing system for spin-coating a substrate with Molecular Self-assembly (MSA) chemicals to form photoresist films and/or low dielectric constant (low-k) films on the substrate. The spin-coating processing system may include a spin-coating chamber that can receive and spin-coat MSA chemicals onto the substrate and an annealing chamber to thermally treat the substrate after the spin-coat process. In certain embodiments, the spin-coating processing system may also pre-treat or pre-wet the substrate prior to the spin-coating process.

Abstract translation: 本公开涉及一种用分子自组装（MSA）化学品旋涂底物以在衬底上形成光致抗蚀剂膜和/或低介电常数（低k）膜的处理系统。 旋涂处理系统可以包括可以将MSA化学品接收和旋涂到基材上的旋涂室，以及在旋涂之后对基材进行热处理的退火室。 在某些实施方案中，旋涂处理系统还可以在旋涂过程之前对基材进行预处理或预润湿。

公开(公告)号：US20200066509A1

公开(公告)日：2020-02-27

申请号：US16671564

申请日：2019-11-01

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Ian J. Brown ,  Ihsan Simms ,  Ainhoa Negreira ,  Kathleen Nafus

IPC: H01L21/027 ,  G03F7/42 ,  G03F7/40 ,  G03F7/09 ,  G03F7/00 ,  B81C1/00 ,  H01L21/311

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

公开(公告)号：US10438806B2

公开(公告)日：2019-10-08

申请号：US15964130

申请日：2018-04-27

Applicant: Tokyo Electron Limited

Inventor： Kathleen Nafus ,  Serge Biesemans

IPC: H01L21/306 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/66

Abstract: Techniques herein include methods for selectively modifying chemical properties of organosilicates including periodic mesoporous organosilicates (PMOs) in situ for use in fabrication of semiconductor devices. With techniques herein, such materials are manipulated in their chemical properties after deposition and can accordingly be used as sacrificial patterning films and/or as patterning enabling materials. Using selective treatments such as annealing, curing, plasma exposure, and silylation, chemical properties such as etch resistance and hydrophobicity can be changed to enable a given patterning operation. A given film can be etch resistant for one patterning operation, and then changed to be etch removable for a subsequent patterning operation.

公开(公告)号：US09418834B2

公开(公告)日：2016-08-16

申请号：US14570865

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Ainhoa Romo Negreira ,  Kathleen Nafus ,  Yuhei Kuwahara ,  Koichi Matsunaga

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/02126 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105

Abstract: This disclosure relates to a processing system for spin-coating a substrate with Molecular Self-assembly (MSA) chemicals to form photoresist films and/or low dielectric constant (low-k) films on the substrate. The spin-coating processing system may include a spin-coating chamber that can receive and spin-coat MSA chemicals onto the substrate and an annealing chamber to thermally treat the substrate after the spin-coat process. In certain embodiments, the spin-coating processing system may also pre-treat or pre-wet the substrate prior to the spin-coating process.

Abstract translation: 本公开涉及一种用分子自组装（MSA）化学品旋涂底物以在衬底上形成光致抗蚀剂膜和/或低介电常数（低k）膜的处理系统。 旋涂处理系统可以包括可以将MSA化学品接收和旋涂到基材上的旋涂室，以及在旋涂之后对基材进行热处理的退火室。 在某些实施方案中，旋涂处理系统还可以在旋涂过程之前对基材进行预处理或预润湿。

公开(公告)号：US20150064917A1

公开(公告)日：2015-03-05

申请号：US14465933

申请日：2014-08-22

Applicant: Tokyo Electron Limited

Inventor： Mark Somervell ,  Ian Brown ,  Ihsan Simms ,  Ainhoa Negreira ,  Kathleen Nafus

IPC: H01L21/306 ,  H01L21/308 ,  H01L21/02

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 nm.

Abstract translation: 公开了一种处理方法，其通过允许在DSA模板中形成改进的引导条来实现改进的定向自组装（DSA）处理方案，其可以使得能够在衬底上形成亚-30nm特征。 可以通过改善不同有机层或膜之间的湿化学处理的选择性来形成改进的引导条。 在一个实施方案中，用一个或多个紫外光波长处理有机层可提高选择性。 UV光的第一波长可以小于200nm，UV光的第二波长可以大于200nm。