公开(公告)号：US20240395557A1

公开(公告)日：2024-11-28

申请号：US18322502

申请日：2023-05-23

Applicant: Tokyo Electron Limited

Inventor： Du ZHANG ,  Scott LEFEVRE ,  Jeffrey SHEARER ,  Peter BIOLSI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/768

Abstract: A method is provided. The method includes etching a substrate to form a recess in the substrate through a plurality of stages. A first one of the plurality of stages forms an inhibitor layer lining an initial portion of the recess based on first etchant radicals. A second one of the plurality of stages exposes the initial portion of the recess based on ions. A third one of the plurality of stages extends the initial portion of the recess based on second etchant radicals.