公开(公告)号：US20240234363A1

公开(公告)日：2024-07-11

申请号：US18320791

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Scott LEFEVRE ,  Adam GILDEA ,  Satohiko HOSHINO ,  Sophia MADELONE ,  Yuji MIMURA

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A method includes providing a first substrate with a first surface including an alkyne moiety. The method includes providing a second substrate with a second surface including an azide moiety. The method further includes bonding the first substrate to the second substrate. The bonding of the first substrate to the second substrate includes making physical contact between the first surface and the second surface at an interface and chemically reacting the alkyne moiety with the azide moiety through a cycloaddition mechanism, thereby forming a triazole moiety-linked layer at the interface.

公开(公告)号：US20240222100A1

公开(公告)日：2024-07-04

申请号：US18605526

申请日：2024-03-14

Applicant: Tokyo Electron Limited

Inventor： Shan HU ,  Peter DELIA ,  Scott LEFEVRE

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  G01N21/00

CPC classification number: H01J37/32972 ,  H01J37/32449 ,  H01J37/32963 ,  H01L21/67253 ,  H01L22/26 ,  G01N21/00 ,  H01J37/32458 ,  H01J2237/3345

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

公开(公告)号：US20240170444A1

公开(公告)日：2024-05-23

申请号：US18320781

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Scott LEFEVRE ,  Adam GILDEA ,  Satohiko HOSHINO ,  Sophia MADELONE ,  Yuji MIMURA

IPC: H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/8022 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A method includes providing a first bonding surface on a first substrate, the first bonding surface including a bonding layer that is thermally curable or photocurable. The method includes providing a second bonding surface on a second substrate. The method includes bonding the first substrate to the second substrate by making physical contact between the first bonding surface and second bonding surface. The method further includes applying thermal energy or light to the bonding layer.

公开(公告)号：US20250110055A1

公开(公告)日：2025-04-03

申请号：US18478954

申请日：2023-09-29

Applicant: Tokyo Electron Limited

Inventor： David Eitan BARLAZ ,  Scott LEFEVRE ,  Joshua LAROSE ,  Henry PURETZ

IPC: G01N21/64 ,  G01N21/01 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687

Abstract: A system and a method directed to a monitoring system of semiconductor processing chambers is provided. In particular, monitoring of any chemical formation on a chamber and a wafer of a semiconductor processing chamber using in-situ laser induced fluorescence is provided. The monitoring system and method detect issues before they become a problem for the semiconductor processing chambers by providing diagnosis on chamber health and mechanisms for associated process shifts with a faster turnaround time.

公开(公告)号：US20240395557A1

公开(公告)日：2024-11-28

申请号：US18322502

申请日：2023-05-23

Applicant: Tokyo Electron Limited

Inventor： Du ZHANG ,  Scott LEFEVRE ,  Jeffrey SHEARER ,  Peter BIOLSI

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/768

Abstract: A method is provided. The method includes etching a substrate to form a recess in the substrate through a plurality of stages. A first one of the plurality of stages forms an inhibitor layer lining an initial portion of the recess based on first etchant radicals. A second one of the plurality of stages exposes the initial portion of the recess based on ions. A third one of the plurality of stages extends the initial portion of the recess based on second etchant radicals.