公开(公告)号：US20150044785A1

公开(公告)日：2015-02-12

申请号：US14453352

申请日：2014-08-06

Applicant: Tokyo Electron Limited

Inventor： Carlos A. FONSECA ,  Anton DEVILLIERS ,  Benjamen M. RATHSACK ,  Jeffrey T. SMITH ,  Lior HULI

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/02016 ,  G03F7/70783 ,  H01L21/30625 ,  H01L21/687 ,  H01L22/12 ,  H01L22/20

Abstract: Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. Then a lithographic process may be performed on the semiconductor substrate having the texturized backside.

Abstract translation: 所描述的实施例涉及一种减小光刻畸变的方法和装置。 半导体衬底的背面可以被组织化。 然后可以在具有纹理化背面的半导体衬底上进行光刻工艺。