公开(公告)号：US20130115367A1

公开(公告)日：2013-05-09

申请号：US13661514

申请日：2012-10-26

Applicant: Tokyo Electron Limited

Inventor： Naotaka NORO ,  Hiroaki ASHIZAWA ,  Junya HARA ,  Takaaki IWAI

IPC: H01B13/00

CPC classification number: C23C16/40 ,  H01L28/65

Abstract: A method for forming a ruthenium oxide film includes: providing a substrate in a processing chamber; supplying a ruthenium compound having a structure of the following formula (1) in which two β-diketons and two groups selected among olefin, amine, nitril, and carbonyl are coordinate-bonded to Ru in a vapor state onto the substrate; supplying oxygen gas onto the substrate; and forming a ruthenium oxide film on the substrate by reaction between the ruthenium compound gas and the oxygen gas. where R1 and R2 indicate alkyl groups having a total carbon number of about 2 to 5, and R3 indicates a group selected among an olefin group, an amine group, a nitril group and a carbonyl group.

Abstract translation: 一种形成氧化钌膜的方法包括：在处理室中提供衬底; 提供具有下式（1）结构的钌化合物，其中两个β-二酮和选自烯烃，胺，腈和羰基的两个基团以蒸汽状态与Ru配位结合到基底上; 将氧气供应到所述基底上; 并且通过钌化合物气体和氧气之间的反应在基板上形成氧化钌膜。 其中R 1和R 2表示总碳数为约2至5的烷基，R 3表示选自烯烃基，胺基，硝基和羰基中的基团。