公开(公告)号：US20150279705A1

公开(公告)日：2015-10-01

申请号：US14656164

申请日：2015-03-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takaaki IWAI

IPC: H01L21/67 ,  H01L21/321 ,  H05B6/64 ,  H01L21/324

CPC classification number: H01L21/67115 ,  H01L21/324 ,  H05B6/6411 ,  H05B6/6447 ,  H05B6/6452 ,  H05B6/705 ,  H05B6/707 ,  H05B6/806 ,  H05B2206/044

Abstract: A microwave heating method includes: heating an object to be treated by irradiation of microwaves onto the object to be treated, the object to be treated having a film to be annealed and a substrate body on which the film to be annealed is formed; and stopping the irradiation of the microwaves, wherein the film to be annealed has a temperature rising rate by the irradiation of the microwaves higher than that of the substrate body. Switching from the heating the object to be treated to the stopping the irradiation of the microwaves is performed, after a temperature T1 of the film to be annealed reaches a temperature equal to or greater than a target temperature T of the film to be annealed by the irradiation of the microwaves, and before a temperature T2 of the substrate body reaches a steady state.

Abstract translation: 微波加热方法包括：通过将微波照射加工到待处理物体上，待处理对象物和被退火膜的基板体上形成待处理膜; 并且停止微波的照射，其中待退火的膜通过微波照射比衬底主体的照射具有升温速率。 从待加热物体的加热切换到停止微波的照射，在待退火膜的温度T1达到等于或大于待退火膜的目标温度T的温度之后， 微波的照射，以及在基体的温度T2达到稳定状态之前。

公开(公告)号：US20140287585A1

公开(公告)日：2014-09-25

申请号：US14219141

申请日：2014-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroaki ASHIZAWA ,  Takaaki IWAI

IPC: H01L49/02

CPC classification number: H01L28/65 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45553 ,  C23C18/1279 ,  H01L21/0228 ,  H01L21/76823 ,  H01L27/10852 ,  H01L28/90

Abstract: A ruthenium film formation method including: forming a ruthenium oxide film on a substrate; and reducing the ruthenium oxide film into a ruthenium film, wherein the reducing the ruthenium oxide film comprises at least supplying a ruthenium compound gas containing hydrogen as a reducing agent.

Abstract translation: 一种钌膜形成方法，包括：在基板上形成氧化钌膜; 并将所述氧化钌膜还原成钌膜，其中，还原所述氧化钌膜至少包含含有氢的钌化合物气体作为还原剂。

公开(公告)号：US20130115367A1

公开(公告)日：2013-05-09

申请号：US13661514

申请日：2012-10-26

Applicant: Tokyo Electron Limited

Inventor： Naotaka NORO ,  Hiroaki ASHIZAWA ,  Junya HARA ,  Takaaki IWAI

IPC: H01B13/00

CPC classification number: C23C16/40 ,  H01L28/65

Abstract: A method for forming a ruthenium oxide film includes: providing a substrate in a processing chamber; supplying a ruthenium compound having a structure of the following formula (1) in which two β-diketons and two groups selected among olefin, amine, nitril, and carbonyl are coordinate-bonded to Ru in a vapor state onto the substrate; supplying oxygen gas onto the substrate; and forming a ruthenium oxide film on the substrate by reaction between the ruthenium compound gas and the oxygen gas. where R1 and R2 indicate alkyl groups having a total carbon number of about 2 to 5, and R3 indicates a group selected among an olefin group, an amine group, a nitril group and a carbonyl group.

Abstract translation: 一种形成氧化钌膜的方法包括：在处理室中提供衬底; 提供具有下式（1）结构的钌化合物，其中两个β-二酮和选自烯烃，胺，腈和羰基的两个基团以蒸汽状态与Ru配位结合到基底上; 将氧气供应到所述基底上; 并且通过钌化合物气体和氧气之间的反应在基板上形成氧化钌膜。 其中R 1和R 2表示总碳数为约2至5的烷基，R 3表示选自烯烃基，胺基，硝基和羰基中的基团。