公开(公告)号：US20250166975A1

公开(公告)日：2025-05-22

申请号：US19032746

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Junya KURAMOTO ,  Takashi ARAMAKI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.