公开(公告)号：US20250079138A1

公开(公告)日：2025-03-06

申请号：US18925387

申请日：2024-10-24

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI ,  Nobutaka SASAKI ,  Toshiki AKAMA ,  Shusei KATO ,  Gyeong min PARK ,  Wataru SHIMIZU ,  Ryota KOITABASHI

IPC: H01J37/32

Abstract: A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

公开(公告)号：US20230207276A1

公开(公告)日：2023-06-29

申请号：US18086647

申请日：2022-12-22

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32183 ,  H01J37/32715 ,  H01J37/32091 ,  H01J2237/334

Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber having a substrate support configured to support a substrate; a shower head having a plurality of gas inlets configured to introduce a gas into respective regions in the plasma processing chamber; a gas supply configured to supply a gas to the plurality of gas inlets; a plasma generator configured to generate a plasma of the gas; and a controller configured to control at least the gas supply. The gas supply includes: a gas unit configured to supply a common gas to the plurality of gas inlets; and an injection unit configured to supply an injection gas to the selected gas inlet among the plurality of gas inlets, and the controller controls the injection unit so that two or more types of injection gases are supplied to two different ones of the plurality of gas inlets.

公开(公告)号：US20250112031A1

公开(公告)日：2025-04-03

申请号：US18980363

申请日：2024-12-13

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a processing container, a stage, an edge ring, a lifter, and circuitry. The stage has a first mounting surface and a second mounting surface. The edge ring is placed on the second mounting surface. The lifter moves the edge ring with respect to the second mounting surface. Plasma processing of the substrate is performed while the substrate is positioned on the first mounting surface. Further, a first cleaning process is performed in which a first bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface and then a second cleaning process is formed in which a second bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface.

公开(公告)号：US20250166975A1

公开(公告)日：2025-05-22

申请号：US19032746

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Junya KURAMOTO ,  Takashi ARAMAKI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.

公开(公告)号：US20250104979A1

公开(公告)日：2025-03-27

申请号：US18976345

申请日：2024-12-11

Applicant: Tokyo Electron Limited

Inventor： Toshiki AKAMA ,  Shusei KATO ,  Gyeong min PARK ,  Nobutaka SASAKI ,  Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A substrate processing system including a plasma processing apparatus including a processing container, a decompressed transferrer connected to the plasma processing apparatus, and a controller, a substrate support, a ring placing surface for receiving an edge ring, and an electrostatic chuck for electrostatically attracting the edge ring to the ring placing surface, a supply path for supplying a gas between a rear surface of the edge ring and the ring placing surface, and a pressure sensor connected to the supply path, the edge ring is placed on the ring placing surface, gas is supplied to the supply path to maintain a pressure in the supply path to be higher than a pressure in the processing container, the pressure in the supply path is measured by the pressure sensor to determine a placing state of the edge ring on the ring placing surface.

公开(公告)号：US20240222090A1

公开(公告)日：2024-07-04

申请号：US18541526

申请日：2023-12-15

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32091 ,  H01J2237/2007

Abstract: The purpose of the present disclosure is to provide a plasma processing apparatus including: a plasma processing chamber; a first bias electrode disposed in an electrostatic chuck to have a first outer diameter; a second bias electrode disposed in the electrostatic chuck to have a second outer diameter; a third bias electrode disposed in the electrostatic chuck to have a third outer diameter; a first DC power supply; a second DC power supply; a third DC power supply; a voltage adder; a first voltage pulse generator electrically connected to the first bias electrode and configured to generate a first voltage pulse signal; a second voltage pulse generator electrically connected to the second bias electrode and configured to generate a second voltage pulse signal; and a third voltage pulse generator electrically connected to the third bias electrode and configured to generate a third voltage pulse signal.

公开(公告)号：US20240128058A1

公开(公告)日：2024-04-18

申请号：US18381222

申请日：2023-10-18

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Kojiro MATSUZAKA ,  Atsushi OGATA ,  Lifu LI ,  Gyeong Min PARK

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J2237/334

Abstract: A substrate processing apparatus comprises a substrate support disposed in the chamber, a shutter including a valve body configured to open and close an opening of the chamber, and a baffle plate disposed between an inner peripheral side of the chamber and the substrate support and having a vertically inclined portion at an end portion on a substrate support side, and a contact member disposed on a side surface of the substrate support and formed of a conductive elastic member. In a state where the shutter is closed, contact between the end portion on the substrate support side and the contact member is maintained.