公开(公告)号：US20240402609A1

公开(公告)日：2024-12-05

申请号：US18673751

申请日：2024-05-24

Applicant: Tokyo Electron Limited

Inventor： Kenji IIZUKA ,  Koji USHIMARU ,  Kazuhiko OOSHIMA ,  Kei MIYAZAKI ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Katsuhiro IKEDA ,  Ryohei FUJISE

IPC: G03F7/36 ,  G03F7/00

Abstract: A developing apparatus for developing a substrate having a coating film of a metal-containing resist formed thereon, includes: a heating part configured to support and heat the substrate; a chamber configured to cover the heating part and form a treatment space above the heating part; a gas supplier to which a developing gas containing acid is supplied; and a dispersion mechanism configured to disperse the developing gas supplied to the gas supplier and discharge the developing gas to the treatment space from a plurality of discharge ports formed at positions above the heating part.