公开(公告)号：US20160026087A1

公开(公告)日：2016-01-28

申请号：US14802810

申请日：2015-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohiro ISEKI ,  Hirofumi TAKEGUCHI ,  Yuichi TERASHITA

IPC: G03F7/32

CPC classification number: G03F7/32 ,  B05D1/005 ,  G03F7/3021 ,  G06F19/00 ,  H01L21/6715

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

Abstract translation: 提供了一种显影形成在基板的表面上以形成抗蚀剂图案的曝光的抗蚀剂膜的方法，该方法包括：使基板围绕垂直于水平支撑的基板表面的方向延伸的旋转轴旋转 ; 通过位于基板上方的排出孔将显影液供给到抗蚀剂膜上，使得显影溶液广泛地铺展在抗蚀剂膜的表面上; 并且将具有面向基板表面的表面的润湿部分定位在基板的表面中的先前区域之上，前一区域是通过排出孔优先供给显影液的区域。

公开(公告)号：US20240249951A1

公开(公告)日：2024-07-25

申请号：US18418757

申请日：2024-01-22

Applicant: Tokyo Electron Limited

Inventor： Kosuke YOSHIHARA ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Naoki SHIBATA

IPC: H01L21/308 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/3081 ,  C23C16/042 ,  C23C16/45517 ,  C23C16/46 ,  H01L21/02491 ,  H01L21/3247

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of a metal-containing resist formed thereon and has been subjected to an exposure treatment and a heat treatment after the exposure treatment, the developing including: exposing the substrate to an acid atmosphere being an atmosphere containing gas of a weak acid under a pressure of an atmospheric pressure or higher; and removing a product produced by a reaction between the metal-containing resist and the gas of the weak acid, by heating the substrate.

公开(公告)号：US20190056666A1

公开(公告)日：2019-02-21

申请号：US16124328

申请日：2018-09-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohiro ISEKI ,  Hirofumi TAKEGUCHI ,  Yuichi TERASHITA

IPC: G03F7/32 ,  G03F7/30

Abstract: There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.

公开(公告)号：US20180019112A1

公开(公告)日：2018-01-18

申请号：US15716663

申请日：2017-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akiko KAI ,  Takafumi NIWA ,  Shogo TAKAHASHI ,  Hiroshi NISHIHATA ,  Yuichi TERASHITA ,  Teruhiko KODAMA

IPC: H01L21/02 ,  H01L21/033 ,  G03F7/30 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67051 ,  G03F7/3021 ,  H01L21/0206 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68742

Abstract: A liquid processing apparatus for liquid-processing a substrate includes a substrate holding device that rotates a substrate in horizontal position, a nozzle holding device holding processing liquid and gas nozzles, the liquid nozzle discharging processing liquid from a discharge port such that the liquid is discharged obliquely to surface of the substrate, the gas nozzle discharging gas perpendicularly to the surface of the substrate, a moving device that moves the nozzle device with respect to the surface of the substrate, and a control device including circuitry that controls the nozzle, substrate and moving devices such that while the substrate is rotated, the liquid is discharged to peripheral portion toward downstream side in rotation direction and along tangential direction of the substrate and gas is discharged from the gas nozzle toward position adjacent to liquid landing position of the liquid on the surface and is on center side of the substrate.

公开(公告)号：US20150362839A1

公开(公告)日：2015-12-17

申请号：US14704200

申请日：2015-05-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirofumi TAKEGUCHI ,  Tomohiro ISEKI ,  Yuichi TERASHITA

IPC: G03F7/32

CPC classification number: G03F7/32 ,  B05D1/005 ,  G03F7/162 ,  G03F7/3028 ,  H01L21/6715

Abstract: There is provided a developing method which can form a resist having a sufficiently high uniformity of CD distribution. The developing method for developing a resist film after exposure on a substrate surface to form a resist pattern, includes the sequential steps of: (A) supplying a developer to the rotating substrate; (B) reacting the resist film with the developer; and (C) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. In the step (A), a liquid-contact nozzle, having an ejection orifice for the developer and a lower surface extending laterally from the ejection orifice and disposed opposite the resist film, is used, and in the step (C), the boundary between a reaction-terminated area of the surface of the resist film, from which the developer has been removed, and an in-progress reaction area of the surface of the resist film, where the reaction of the resist film with the developer is in progress, is moved from the center toward the periphery of the resist film.

Abstract translation: 提供了可以形成具有足够高的CD分布均匀性的抗蚀剂的显影方法。 用于在基板表面上曝光以形成抗蚀剂图案之后显影抗蚀剂膜的显影方法包括以下顺序步骤：（A）将显影剂供应到旋转基板; （B）使抗蚀剂膜与显影剂反应; 和（C）从抗蚀膜的表面除去显影剂，以终止抗蚀剂膜与显影剂的反应。 在步骤（A）中，使用具有用于显影剂的喷射孔的液体接触喷嘴和从喷射口横向延伸并且与抗蚀剂膜相对设置的下表面，并且在步骤（C）中，边界 在去除了显影剂的抗蚀剂膜的表面的反应终止区域和抗蚀剂膜的表面的抗蚀剂膜的表面的正在进行的反应区域之间，其中抗蚀剂膜与显影剂的反应正在进行中 从中心朝向抗蚀剂膜的周边移动。

公开(公告)号：US20160070171A1

公开(公告)日：2016-03-10

申请号：US14845827

申请日：2015-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TERASHITA ,  Hirofumi TAKEGUCHI ,  Takeshi SHIMOAOKI ,  Kousuke YOSHIHARA ,  Tomohiro ISEKI

IPC: G03F7/16

CPC classification number: G03F7/3021 ,  H01L21/6715

Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Abstract translation: 显影方法包括：通过第一显影剂喷嘴在由基板保持单元保持的基板的表面上形成显影剂的水坑; 随后将显影剂从中央或周边部分排出到第一显影剂喷嘴的周边或中心部分的第一显影剂喷嘴与第一显影剂喷嘴的接触部分接触 水坑 将显影剂从第二显影剂喷嘴供应到旋转基板上，从而在基板平面中均匀化通过显影剂扩展步骤的显影进展程度的分布; 并且在显影剂扩散步骤和显影剂供应步骤之间移除显影剂以除去基板上的显影剂。

公开(公告)号：US20150004311A1

公开(公告)日：2015-01-01

申请号：US14308784

申请日：2014-06-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsunori ICHINO ,  Kousuke YOSHIHARA ,  Yuichi TERASHITA

IPC: B05C11/08 ,  B05D1/00

CPC classification number: H01L21/6715 ,  B05C11/08 ,  B05D1/005 ,  G03F7/162

Abstract: A coating film forming apparatus includes: a substrate holding unit to horizontally hold a substrate; a rotating mechanism to rotate the substrate held by the substrate holding unit; a coating liquid supplying mechanism to supply coating liquid to form a coating film on the substrate; an annular member to rectify a gas stream above a periphery of the substrate when liquid film of the coating liquid is dried by rotation of the substrate, the annular member being provided above the periphery of the substrate and along a circumferential direction of the substrate so as to cover the periphery of the substrate; and a protrusion provided on an inner periphery of the annular member along circumferential direction of the annular member so as to protrude upward to reduce component of the gas stream flowing directly downward near an inner peripheral edge of the annular member.

Abstract translation: 涂膜形成装置包括：水平保持基板的基板保持单元; 旋转机构，旋转由所述基板保持单元保持的所述基板; 涂布液供给机构，在基板上供给涂布液，形成涂膜; 环状构件，用于在涂布液的液体膜通过旋转基板而被干燥时对基板的周边的气体进行整流，环形构件设置在基板的周围的上方，并且沿着基板的圆周方向，以便 以覆盖基板的周边; 以及沿所述环状构件的周向设置在所述环状构件的内周上的突起，以向上突出，以减少在所述环形构件的内周边缘附近直接向下流动的气流的分量。

公开(公告)号：US20140174475A1

公开(公告)日：2014-06-26

申请号：US14101669

申请日：2013-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji TAKAYANAGI ,  Yukie MINEKAWA ,  Yuichi YOSHIDA ,  Kousuke YOSHIHARA ,  Yuichi TERASHITA ,  Toshinobu FURUSHO ,  Takashi SASA

IPC: H01L21/67

Abstract: A filtration efficiency, which is similar to the filtration efficiency obtained when a plurality of filters are provided, can be obtained by one filter, and decrease in throughput can be prevented. Based on a control signal from a control unit 101, a resist liquid L is sucked into a pump 70 through a filter. A part of the resist liquid sucked in the pump is discharged from a discharge nozzle 7. The remaining resist liquid is returned to a supply conduit 51b on a primary side of the filter. A process is synthesized by adding a replenishment amount equal to the discharge amount to the return amount. The discharge of the synthesized process liquid and the filtration thereof by the filter are performed the number of times corresponding to a rate between the discharge amount and the return amount.

Abstract translation: 通过一个过滤器可以获得与提供多个过滤器时获得的过滤效率相似的过滤效率，并且可以防止生产量的降低。 基于来自控制单元101的控制信号，抗蚀剂液体L通过过滤器被吸入泵70。 吸入泵中的抗蚀剂液体的一部分从排出喷嘴7排出。剩余的抗蚀剂液体返回到过滤器的一次侧的供给管51b。 通过将等于排出量的补充量加到返回量来合成过程。 进行合成处理液的排出以及过滤器的过滤，进行与排出量与返回量之间的比例对应的次数。

公开(公告)号：US20240402609A1

公开(公告)日：2024-12-05

申请号：US18673751

申请日：2024-05-24

Applicant: Tokyo Electron Limited

Inventor： Kenji IIZUKA ,  Koji USHIMARU ,  Kazuhiko OOSHIMA ,  Kei MIYAZAKI ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Katsuhiro IKEDA ,  Ryohei FUJISE

IPC: G03F7/36 ,  G03F7/00

Abstract: A developing apparatus for developing a substrate having a coating film of a metal-containing resist formed thereon, includes: a heating part configured to support and heat the substrate; a chamber configured to cover the heating part and form a treatment space above the heating part; a gas supplier to which a developing gas containing acid is supplied; and a dispersion mechanism configured to disperse the developing gas supplied to the gas supplier and discharge the developing gas to the treatment space from a plurality of discharge ports formed at positions above the heating part.

公开(公告)号：US20170296944A1

公开(公告)日：2017-10-19

申请号：US15639010

申请日：2017-06-30

Applicant: Tokyo Electron Limited

Inventor： Kousuke YOSHIHARA ,  Katsunori ICHINO ,  Toshinobu FURUSHO ,  Takashi SASA ,  Katsuhiro TSUCHIYA ,  Yuichi TERASHITA ,  Hirofumi TAKEGUCHI

IPC: B01D19/00 ,  G03F7/16 ,  H01L21/67 ,  G03F7/30

CPC classification number: B01D19/0063 ,  B01D19/0031 ,  B01D19/0068 ,  G03F7/16 ,  G03F7/30 ,  H01L21/6715

Abstract: A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.