公开(公告)号：US20240402609A1

公开(公告)日：2024-12-05

申请号：US18673751

申请日：2024-05-24

Applicant: Tokyo Electron Limited

Inventor： Kenji IIZUKA ,  Koji USHIMARU ,  Kazuhiko OOSHIMA ,  Kei MIYAZAKI ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Katsuhiro IKEDA ,  Ryohei FUJISE

IPC: G03F7/36 ,  G03F7/00

Abstract: A developing apparatus for developing a substrate having a coating film of a metal-containing resist formed thereon, includes: a heating part configured to support and heat the substrate; a chamber configured to cover the heating part and form a treatment space above the heating part; a gas supplier to which a developing gas containing acid is supplied; and a dispersion mechanism configured to disperse the developing gas supplied to the gas supplier and discharge the developing gas to the treatment space from a plurality of discharge ports formed at positions above the heating part.

公开(公告)号：US20240030049A1

公开(公告)日：2024-01-25

申请号：US18375958

申请日：2023-10-02

Applicant: Tokyo Electron Limited

Inventor： Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Koji USHIMARU ,  Ryohei FUJISE

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  G03F7/16 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00

CPC classification number: H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  F27B17/0025 ,  G03F7/168 ,  F27D3/0084 ,  H05B3/22 ,  H05B1/0233 ,  F27D5/0037 ,  F27B17/0083

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

公开(公告)号：US20210118707A1

公开(公告)日：2021-04-22

申请号：US17072457

申请日：2020-10-16

Applicant: Tokyo Electron Limited

Inventor： Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Koji USHIMARU ,  Ryohei FUJISE

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00 ,  G03F7/16

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.