公开(公告)号：US20230094053A1

公开(公告)日：2023-03-30

申请号：US17934668

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA ,  TAKASHI SAKUMA ,  Osamu YOKOYAMA ,  Kwangpyo CHOI

IPC: H01L21/02 ,  H01L21/306

Abstract: A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.