公开(公告)号：US20210005502A1

公开(公告)日：2021-01-07

申请号：US16909228

申请日：2020-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Kentaro ASAKURA ,  Tetsuya SAITOU ,  Masahisa WATANABE

IPC: H01L21/687 ,  C23C16/455

Abstract: A stage on which a substrate is mounted, includes a stage body having an upper surface on which the substrate is mounted, a cover member configured to cover an outer edge portion of the upper surface of the stage body, and a positional deviation preventing member provided between the upper surface of the stage body and a lower surface of the cover member and configured to roll or slide. A body-side recess configured to accommodate the positional deviation preventing member is formed on the upper surface of the stage body. A cover-side recess configured to accommodate the positional deviation preventing member accommodated in the body-side recess is formed on the lower surface of the cover member. At least one of the body-side recess and the cover-side recess is formed in a bowl shape having an inclined surface extending along a radial direction of the stage body.

公开(公告)号：US20200335385A1

公开(公告)日：2020-10-22

申请号：US16848211

申请日：2020-04-14

Applicant: Tokyo Electron Limited

Inventor： Tetsuya SAITOU ,  Yuichiro WAGATSUMA

IPC: H01L21/687 ,  H01L21/67

Abstract: A substrate processing apparatus for processing a substrate includes: a stage having a through-hole penetrating the stage in a vertical direction, the stage being configured to place the substrate on an upper surface of the stage and perform at least one of heating and cooling of the substrate placed on the upper surface; a lift pin configured to be inserted into the through-hole and capable of protruding from the upper surface of the stage through the through-hole; and a support member configured to be capable of supporting the lift pin, wherein the lift pin has a flange located below a lower surface of the stage, wherein the support member is further configured to support the lift pin by engaging with the flange, and wherein the through-hole in the stage is narrower than the flange of the lift pin.

公开(公告)号：US20230094053A1

公开(公告)日：2023-03-30

申请号：US17934668

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA ,  TAKASHI SAKUMA ,  Osamu YOKOYAMA ,  Kwangpyo CHOI

IPC: H01L21/02 ,  H01L21/306

Abstract: A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.

公开(公告)号：US20210193503A1

公开(公告)日：2021-06-24

申请号：US17116799

申请日：2020-12-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA

IPC: H01L21/687

Abstract: A substrate processing apparatus for processing a substrate, includes a stage including a through-hole vertically penetrating the stage, a pin inserted into the through-hole, and a support member configured to support the pin. The pin has a protrusion configured to protrude from the upper surface of the stage through the through-hole, and a large diameter portion located below the protrusion and formed thicker than the protrusion. The stage further includes a lateral hole formed to extend from a side surface of the stage so as to intersect with the through-hole. The support member is inserted into the lateral hole. The support member is configured to support the pin by an engagement with the large diameter portion while the support member is inserted into the lateral hole. An upper opening end of the through-hole is thinner than the large diameter portion.

公开(公告)号：US20210005505A1

公开(公告)日：2021-01-07

申请号：US16915046

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro WAGATSUMA ,  Kentaro ASAKURA ,  Tetsuya SAITOU ,  Masahisa WATANABE

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/67

Abstract: A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

公开(公告)号：US20190067015A1

公开(公告)日：2019-02-28

申请号：US16111792

申请日：2018-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Miyako KANEKO ,  Naotaka NORO

IPC: H01L21/285 ,  C23C16/44 ,  C23C16/458

Abstract: There is provided a film-forming method, including: a pre-coating process of supplying a first gas containing silicon into a processing container in which a substrate is not loaded, and coating surfaces of members installed inside the processing container, including a mounting table configured to mount the substrate thereon, with a film made of silicon; subsequently, a mounting process of mounting the substrate on the mounting table so that a back surface of the substrate is in contact with the film made of silicon; and subsequently, a film-forming process of supplying a second gas containing an organometallic compound into the processing container, and forming a film made of a metal constituting the organometallic compound on the substrate.

公开(公告)号：US20230392261A1

公开(公告)日：2023-12-07

申请号：US18032544

申请日：2021-10-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/56 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/56 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/52 ,  C23C16/45565

Abstract: A substrate treatment method of a substrate treatment device, which includes a stage on which a substrate is mounted, a heating element provided on the stage, and a rotation mechanism that rotates the stage, includes: mounting the substrate on the stage; and performing a process on the substrate, wherein the performing the process on the substrate has a plurality of steps, and wherein each of the plurality of steps includes controlling the heating element and controlling the rotation mechanism.

公开(公告)号：US20210005482A1

公开(公告)日：2021-01-07

申请号：US16918774

申请日：2020-07-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hachishiro IIZUKA ,  Masahisa WATANABE ,  Yuichiro WAGATSUMA

IPC: H01L21/67

Abstract: A sealing structure of a gas supply line assembly connected to a processing chamber for processing a substrate in a vacuum atmosphere is provided. The sealing structure includes a first pipe member constituting the gas supply line assembly and having an end surface where an opening communicating with the processing chamber is formed, a second pipe member constituting the gas supply line assembly and having a facing surface facing the end surface of the first pipe member, and a sealing member made of an elastomer disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround the opening. The sealing structure further includes a sheet-shaped porous member disposed between the end surface of the first pipe member and the facing surface of the second pipe member to surround a vicinity of the sealing member.

公开(公告)号：US20200294798A1

公开(公告)日：2020-09-17

申请号：US16815672

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Toyohiro KAMADA ,  Shinichi IKE ,  Shuji AZUMO

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/50 ,  C23C16/52

Abstract: There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.