公开(公告)号：US20230392261A1

公开(公告)日：2023-12-07

申请号：US18032544

申请日：2021-10-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/56 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/56 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/52 ,  C23C16/45565

Abstract: A substrate treatment method of a substrate treatment device, which includes a stage on which a substrate is mounted, a heating element provided on the stage, and a rotation mechanism that rotates the stage, includes: mounting the substrate on the stage; and performing a process on the substrate, wherein the performing the process on the substrate has a plurality of steps, and wherein each of the plurality of steps includes controlling the heating element and controlling the rotation mechanism.

公开(公告)号：US20220005690A1

公开(公告)日：2022-01-06

申请号：US17282928

申请日：2019-10-11

Applicant: TOKYO ELECTRON LIMITED ,  JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Yuki TANAKA ,  Hiroyuki HASHIMOTO ,  Mayuko NAKAMURA ,  Takashi MASUDA ,  Hideyuki TAKAGISHI

IPC: H01L21/02

Abstract: A method of forming a silicon film on a substrate having a fine pattern includes performing surface treatment with an adhesion promoter on the substrate having the fine pattern, forming a coating film by applying a silane polymer solution to the substrate on which the surface treatment has been performed, and heating the coating film.

公开(公告)号：US20230094053A1

公开(公告)日：2023-03-30

申请号：US17934668

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA ,  TAKASHI SAKUMA ,  Osamu YOKOYAMA ,  Kwangpyo CHOI

IPC: H01L21/02 ,  H01L21/306

Abstract: A substrate processing method includes: preparing a substrate which includes a base having an epitaxial layer formed by epitaxial growth, and an insulating film formed on the base and having a penetration portion that exposes the epitaxial layer; forming a silicon film on a surface of the epitaxial layer exposed from the penetration portion rather than a side wall of the penetration portion; and forming a metal film on the silicon film formed on the surface of the epitaxial layer rather than the side wall of the penetration portion, and causing the silicon film to react with the metal film to form a metal silicide film.

公开(公告)号：US20210193503A1

公开(公告)日：2021-06-24

申请号：US17116799

申请日：2020-12-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Masahisa WATANABE ,  Mayuko NAKAMURA

IPC: H01L21/687

Abstract: A substrate processing apparatus for processing a substrate, includes a stage including a through-hole vertically penetrating the stage, a pin inserted into the through-hole, and a support member configured to support the pin. The pin has a protrusion configured to protrude from the upper surface of the stage through the through-hole, and a large diameter portion located below the protrusion and formed thicker than the protrusion. The stage further includes a lateral hole formed to extend from a side surface of the stage so as to intersect with the through-hole. The support member is inserted into the lateral hole. The support member is configured to support the pin by an engagement with the large diameter portion while the support member is inserted into the lateral hole. An upper opening end of the through-hole is thinner than the large diameter portion.