公开(公告)号：US20240155824A1

公开(公告)日：2024-05-09

申请号：US18500170

申请日：2023-11-02

Applicant: Tokyo Electron Limited

Inventor： Masahiro IKEJIRI ,  Masaki TERABAYASHI ,  Koji MAEKAWA ,  Koji AKIYAMA

IPC: H10B12/00

CPC classification number: H10B12/03 ,  H10B12/30

Abstract: A method of manufacturing a semiconductor device includes: forming a lower electrode made of a Ti-containing film on a substrate; forming a niobium oxide film on the lower electrode; forming an oxide-based high-dielectric-constant film on the niobium oxide film; forming an upper electrode on the oxide-based high-dielectric-constant film; and performing annealing, wherein, through the forming of the oxide-based high-dielectric-constant film, the forming of the upper electrode, and the performing of the annealing, the niobium oxide film is modified into a low-oxidation-number niobium oxide film that is primarily made of a niobium oxide with an oxidation number lower than Nb2O5.