公开(公告)号：US20230111710A1

公开(公告)日：2023-04-13

申请号：US17960746

申请日：2022-10-05

Applicant: Tokyo Electron Limited

Inventor： Takeya INOUE ,  Kenji SEKIGUCHI ,  Mitsuaki IWASHITA ,  Hirokazu UEDA ,  Koji AKIYAMA ,  Ryuichi ASAKO

IPC: B01D11/04 ,  B01D17/02 ,  B08B3/08 ,  C07C29/86

Abstract: A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.

公开(公告)号：US20190074216A1

公开(公告)日：2019-03-07

申请号：US16123214

申请日：2018-09-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hajime NAKABAYASHI ,  Koji AKIYAMA

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/64

Abstract: There is provided a semiconductor device including: a first wiring; a second wiring; a dielectric layer configured to insulate the first wiring and the second wiring from each other; and an impedance adjustment layer formed between the first wiring and the second wiring, and configured to adjust an impedance between the first wiring and the second wiring.

公开(公告)号：US20230326977A1

公开(公告)日：2023-10-12

申请号：US18024971

申请日：2021-09-01

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Chihiro TAMURA ,  Philippe GAUBERT

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/288

CPC classification number: H01L29/401 ,  H01L28/40 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/288 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02175 ,  H01L21/02337

Abstract: A manufacturing method for a semiconductor device includes forming a dielectric film on a semiconductor substrate or on a lower electrode that is formed on a semiconductor substrate, attaching a metal to a predetermined area on a surface of the dielectric film selectively, forming a metal oxide film with an insulation property in the predetermined area on the surface of the dielectric film by applying heat treatment to the metal, and forming an upper electrode on the dielectric film in a state where the metal oxide film is formed in the predetermined area on the surface of the dielectric film.

公开(公告)号：US20230223251A1

公开(公告)日：2023-07-13

申请号：US17997158

申请日：2021-04-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Yoji IIZUKA ,  Takashi HAYAKAWA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L21/02307 ,  H01L21/6715 ,  H01L21/28556 ,  H01L21/0228

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

公开(公告)号：US20220403509A1

公开(公告)日：2022-12-22

申请号：US17350125

申请日：2021-06-17

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

公开(公告)号：US20190123165A1

公开(公告)日：2019-04-25

申请号：US16169233

申请日：2018-10-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji AKIYAMA ,  Hajime NAKABAYASHI ,  Kazuki HASHIMOTO ,  Sara OTSUKI

IPC: H01L29/51 ,  H01L29/49 ,  H01L29/12 ,  H01L27/092

Abstract: There is provided a semiconductor device. The semiconductor device includes a first electrode made of a metal, a first semiconductor, a first insulating film configured to be provided between the first electrode and the first semiconductor and to be made of an insulating transition metal oxide and an intermediate film configured to be provided between the first electrode and the first insulating film. A lower end of a conduction band of the intermediate film is lower than a Fermi level of the metal constituting the first electrode.

公开(公告)号：US20240155824A1

公开(公告)日：2024-05-09

申请号：US18500170

申请日：2023-11-02

Applicant: Tokyo Electron Limited

Inventor： Masahiro IKEJIRI ,  Masaki TERABAYASHI ,  Koji MAEKAWA ,  Koji AKIYAMA

IPC: H10B12/00

CPC classification number: H10B12/03 ,  H10B12/30

Abstract: A method of manufacturing a semiconductor device includes: forming a lower electrode made of a Ti-containing film on a substrate; forming a niobium oxide film on the lower electrode; forming an oxide-based high-dielectric-constant film on the niobium oxide film; forming an upper electrode on the oxide-based high-dielectric-constant film; and performing annealing, wherein, through the forming of the oxide-based high-dielectric-constant film, the forming of the upper electrode, and the performing of the annealing, the niobium oxide film is modified into a low-oxidation-number niobium oxide film that is primarily made of a niobium oxide with an oxidation number lower than Nb2O5.

公开(公告)号：US20170221716A1

公开(公告)日：2017-08-03

申请号：US15423460

申请日：2017-02-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kentaro SHIRAGA ,  Koji AKIYAMA ,  Junya MIYAHARA ,  Yutaka FUJINO

IPC: H01L21/28 ,  H01L21/8238 ,  H01L29/51 ,  H01L21/321 ,  H01L29/49

CPC classification number: H01L21/28088 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/321 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

公开(公告)号：US20130200491A1

公开(公告)日：2013-08-08

申请号：US13760210

申请日：2013-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Koji AKIYAMA ,  Shingo HISHIYA ,  Katsushige HARADA

IPC: H01L49/02

CPC classification number: H01L28/60 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02356 ,  H01L28/75 ,  H01L28/92

Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.

Abstract translation: 提供一种制造能够实现高介电常数性能和低漏电流的电容器的方法，电容器以及形成在电容器中使用的电介质膜的方法。 通过在基板上形成下电极层来制造电容器; 在下电极层上形成具有界面控制功能的第一TiO 2膜; 在第一TiO 2膜上形成ZrO 2基膜; 在形成ZrO 2基膜之后进行用于使ZrO 2基膜中的ZrO 2结晶的退火处理; 形成用作ZrO2基膜上的电容膜的第二TiO 2膜; 以及在所述第二TiO 2膜上形成上电极层。

公开(公告)号：US20240420970A1

公开(公告)日：2024-12-19

申请号：US18703525

申请日：2022-10-25

Applicant: Tokyo Electron Limited ,  Tokyo University of Science Foundation

Inventor： Takao OKABE ,  Hirokazu UEDA ,  Naoki UMESHITA ,  Mitsuaki IWASHITA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Tamotsu MORIMOTO ,  Toshikazu AKIMOTO

IPC: H01L21/67

Abstract: A liquid circulation system according to an aspect of the present disclosure is for recovering an ionic liquid supplied into a vacuum chamber and returning the recovered ionic liquid back again into the vacuum chamber, and includes a storage tank having an opening communicating with an inside of the vacuum chamber and configured to store the ionic liquid recovered from the inside of the vacuum chamber through the opening, a viscosity pump provided below the storage tank in a vertical direction, and a pipe configured to supply the ionic liquid inside the storage tank into the vacuum chamber.