公开(公告)号：US20240003002A1

公开(公告)日：2024-01-04

申请号：US18370033

申请日：2023-09-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SAMESHIMA ,  Koji MAEKAWA ,  Katsumasa YAMAGUCHI

IPC: C23C16/14 ,  C23C16/24 ,  H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/02 ,  C23C16/52

CPC classification number: C23C16/14 ,  C23C16/24 ,  H01L21/28568 ,  H01L21/76876 ,  C23C16/45525 ,  C23C16/0281 ,  C23C16/52

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

公开(公告)号：US20160351402A1

公开(公告)日：2016-12-01

申请号：US15165524

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji SUZUKI ,  Takanobu HOTTA ,  Koji MAEKAWA ,  Yasushi AIBA

IPC: H01L21/285 ,  C23C16/455 ,  H01L21/3213 ,  C23C16/02

CPC classification number: H01L21/28556 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/76868 ,  H01L21/76876 ,  H01L21/76877

Abstract: There is provided a method of reducing stress in a metal film that is highly stressed, the method including: processing the metal film by supplying a metal chloride gas containing a metal of the metal film and a reduction gas for reducing the metal chloride gas onto the metal film; and forming a process film on the metal film to reduce stress in the metal film.

Abstract translation: 提供了一种降低金属膜的应力高应力的方法，该方法包括：通过将含有金属膜的金属的金属氯化物气体和用于将金属氯化物气体还原的还原气体供给到金属膜上， 金属膜; 并在金属膜上形成工艺膜以减少金属膜中的应力。

公开(公告)号：US20240155824A1

公开(公告)日：2024-05-09

申请号：US18500170

申请日：2023-11-02

Applicant: Tokyo Electron Limited

Inventor： Masahiro IKEJIRI ,  Masaki TERABAYASHI ,  Koji MAEKAWA ,  Koji AKIYAMA

IPC: H10B12/00

CPC classification number: H10B12/03 ,  H10B12/30

Abstract: A method of manufacturing a semiconductor device includes: forming a lower electrode made of a Ti-containing film on a substrate; forming a niobium oxide film on the lower electrode; forming an oxide-based high-dielectric-constant film on the niobium oxide film; forming an upper electrode on the oxide-based high-dielectric-constant film; and performing annealing, wherein, through the forming of the oxide-based high-dielectric-constant film, the forming of the upper electrode, and the performing of the annealing, the niobium oxide film is modified into a low-oxidation-number niobium oxide film that is primarily made of a niobium oxide with an oxidation number lower than Nb2O5.

公开(公告)号：US20200095683A1

公开(公告)日：2020-03-26

申请号：US16570397

申请日：2019-09-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SAMESHIMA ,  Koji MAEKAWA ,  Katsumasa YAMAGUCHI

IPC: C23C16/52 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

Abstract: There is provided a film forming method including: forming an initial tungsten film on a base film formed on a substrate by alternately supplying a B2H6 gas and a WF6 gas while supplying a carrier gas into a processing container in a state in which the substrate is heated to a first temperature within the processing container maintained in a depressurized state; and forming a main tungsten film on the initial tungsten film by alternately supplying a tungsten-containing gas and a reducing gas for reducing the tungsten-containing gas into the processing container in a state in which the substrate is heated to a second temperature higher than the first temperature within the processing container maintained in the depressurized state.

公开(公告)号：US20210164095A1

公开(公告)日：2021-06-03

申请号：US17172589

申请日：2021-02-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SAMESHIMA ,  Koji MAEKAWA ,  Katsumasa YAMAGUCHI

IPC: C23C16/14 ,  C23C16/24 ,  H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/02 ,  C23C16/52

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

公开(公告)号：US20200071829A1

公开(公告)日：2020-03-05

申请号：US16553602

申请日：2019-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEKAWA ,  Katsumasa YAMAGUCHI ,  Takashi SAMESHIMA

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/285

Abstract: A film forming method includes forming a cancel layer on a substrate, which is disposed within a processing container and on which a base film is formed, in a pressure-reduced atmosphere, the cancel layer cancelling orientation of the base film, forming an initial metal film by supplying a metal material gas and a boron-containing gas to the substrate on which the cancel layer is formed, and forming a main metal film on the substrate on which the initial metal film is formed.

公开(公告)号：US20190221434A1

公开(公告)日：2019-07-18

申请号：US16250009

申请日：2019-01-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SAMESHIMA ,  Koji MAEKAWA ,  Katsumasa YAMAGUCHI

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/34 ,  C23C16/56 ,  C23C16/52 ,  C23C16/44

Abstract: A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

公开(公告)号：US20160284553A1

公开(公告)日：2016-09-29

申请号：US15080281

申请日：2016-03-24

Applicant: Tokyo Electron Limited

Inventor： Kenji SUZUKI ,  Koji MAEKAWA ,  Takanobu HOTTA

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45525 ,  C23C16/46 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

Abstract: In a method of forming a tungsten film, an initial tungsten film and a main tungsten film are formed on an underlying film of a substrate. The initial tungsten film is formed on the underlying film by sequentially supplying a tungsten chloride gas and a reduction gas into a chamber while supplying a purging gas between the supplys of the tungsten chloride gas and the reduction gas, or by simultaneously supplying the tungsten chloride gas and the reduction gas. The main tungsten film is formed on the initial tungsten film by sequentially supplying the tungsten chloride gas and the reduction gas into the chamber while purging an inside of the chamber between the supplys of the tungsten chloride gas and the reduction gas. A supply amount of the tungsten chloride gas in forming the initial film is smaller than that in forming the main tungsten film.

Abstract translation: 在形成钨膜的方法中，在基底的下膜上形成初始钨膜和主钨膜。 通过在氯化钨气体和还原气体的供给之间提供净化气体的同时，将氯化钨气体和还原气体依次供给到室内，或者同时供给氯化钨气体，在初始钨膜上形成初始钨膜 和还原气体。 通过在氯化钨气体和还原气体的供给之间清洗室内，依次将氯化钨气体和还原气体供给到室中，在初始钨膜上形成主钨膜。 形成初始膜的氯化钨气体的供给量小于形成主钨膜时的供给量。

公开(公告)号：US20200098573A1

公开(公告)日：2020-03-26

申请号：US16575694

申请日：2019-09-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SAMESHIMA ,  Koji MAEKAWA ,  Katsumasa YAMAGUCHI

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/67

Abstract: There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a B2H6 gas and a WF6 gas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the B2H6 gas and the supply of the WF6 gas.

公开(公告)号：US20190256972A1

公开(公告)日：2019-08-22

申请号：US16276867

申请日：2019-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SAMESHIMA ,  Koji MAEKAWA ,  Katsumasa YAMAGUCHI

IPC: C23C16/14 ,  H01L21/768 ,  H01L21/285 ,  C23C16/24

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.