公开(公告)号：US20250125132A1

公开(公告)日：2025-04-17

申请号：US18911171

申请日：2024-10-09

Applicant: Tokyo Electron Limited

Inventor： Naoki KUBOTA ,  Hiroshi SONE

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/32

Abstract: A substrate processing apparatus comprises a processing chamber having a ceiling and a cathode part installed at the ceiling and configured to sputter a target. The ceiling has an engagement portion around the target. The cathode part includes a first shield member having an attachment portion to be attached to the engagement portion and a conductive seal member configured to electrically connect the ceiling and the first shield member.

公开(公告)号：US20240360543A1

公开(公告)日：2024-10-31

申请号：US18573740

申请日：2022-06-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato SHINADA ,  Naoki KUBOTA

IPC: C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56

CPC classification number: C23C14/3407 ,  C23C14/50 ,  C23C14/54 ,  C23C14/564

Abstract: This film-forming apparatus comprises a processing container, a sputtering target provided in the processing container, a pedestal having a mounting surface for mounting of a substrate in the processing container, a shutter member capable of covering the mounting surface, a conveyance mechanism for carrying in and carrying out the shutter member to/from the pedestal, a detection unit that is provided to the conveyance mechanism itself and detects an indicator relating to the presence/absence of the shutter member, and a processing unit for determining whether the shutter member is present/absent with respect to the conveyance mechanism on the basis of the detection result from the detection unit.

公开(公告)号：US20230290618A1

公开(公告)日：2023-09-14

申请号：US18179424

申请日：2023-03-07

Applicant: Tokyo Electron Limited

Inventor： Naoki KUBOTA

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32183 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/335

Abstract: A substrate processing apparatus for processing a substrate by causing ions in plasma to act on the substrate, includes: a process container in which the substrate to be processed is accommodated, the process container configured to generate the plasma in an interior of the process container; a stage provided inside the process container and configured to place the substrate on the stage; a radio-frequency power source configured to apply radio-frequency power to the stage to cause the ions in the plasma to act on the substrate; a shield member provided inside the process container and having a driven portion; a drive mechanism configured to drive the driven portion of the shield member; and at least one flexible conductive connection plate configured to connect the driven portion of the shield member and a grounded portion and configured to be deformed in response to the driving of the driven portion.