公开(公告)号：US11037798B2

公开(公告)日：2021-06-15

申请号：US15807330

申请日：2017-11-08

Applicant: Tokyo Electron Limited

Inventor： Barton G. Lane ,  Nasim Eibagi ,  Alok Ranjan ,  Peter L. G. Ventzek

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  H01L21/66

Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.

公开(公告)号：US20180130669A1

公开(公告)日：2018-05-10

申请号：US15807330

申请日：2017-11-08

Applicant: Tokyo Electron Limited

Inventor： Barton G. Lane ,  Nasim Eibagi ,  Alok Ranjan ,  Peter L. G. Ventzek

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/66 ,  H01L21/02

CPC classification number: H01L21/31138 ,  H01L21/02321 ,  H01L21/0276 ,  H01L21/31144 ,  H01L22/12

Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.