公开(公告)号：US20250155879A1

公开(公告)日：2025-05-15

申请号：US18389207

申请日：2023-11-13

Applicant: Tokyo Electron Limited

Inventor： Sergey AVERKIN ,  Pingshan LUAN ,  Toru HISAMATSU

IPC: G05B19/418 ,  G06F16/33

Abstract: Systems and methods for process development assistance are disclosed. A system includes one or more processors and memory. The system receives a scorecard including a set of criteria for fabricating a semiconductor device. The system obtains, based on the scorecard, a set of recipes stored in a knowledge base. The system obtains a set of feature dimensions associated with the set of recipes. The system obtains, using an analytic hierarchy process on the set of feature dimensions, the set of criteria, and weights of the set of criteria, an objective function value of each of the set of recipes. The system selects a subset of recipes according to the objective function value of each of the set of recipes. The system generates at least one recipe according to the selected subset of recipes and the objective function value. The system displays, via a display device, the at least one recipe.

公开(公告)号：US20230360921A1

公开(公告)日：2023-11-09

申请号：US17964601

申请日：2022-10-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Matthew FLAUGH ,  Jonathan HOLLIN ,  Subhadeep KAL ,  Pingshan LUAN ,  Hamed HAJIBABAEINAJAFABADI ,  Yu-Hao TSAI ,  Aelan MOSDEN

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L29/42392

Abstract: Selective protection and etching is provided which can be utilized in etching of a silicon containing layer with respect to a Ge or SiGe layer. In an example, the layers are stacked, and an oxide is on a side surface of the layers. A treatment is utilized to provide a modified surface or termination surface on side surfaces of the Ge/SiGe layers, and a heat treatment is provided after the gas treatment to selectively sublimate layer portions on side surfaces of the Si containing layers. The gas treatment and heat treatment are preferably in non-plasma environments. Thereafter, a plasma process is performed to form a protective layer on the Ge containing layers, and the Si containing layers can be etched with the plasma.