公开(公告)号：US20230360921A1

公开(公告)日：2023-11-09

申请号：US17964601

申请日：2022-10-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Matthew FLAUGH ,  Jonathan HOLLIN ,  Subhadeep KAL ,  Pingshan LUAN ,  Hamed HAJIBABAEINAJAFABADI ,  Yu-Hao TSAI ,  Aelan MOSDEN

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L29/42392

Abstract: Selective protection and etching is provided which can be utilized in etching of a silicon containing layer with respect to a Ge or SiGe layer. In an example, the layers are stacked, and an oxide is on a side surface of the layers. A treatment is utilized to provide a modified surface or termination surface on side surfaces of the Ge/SiGe layers, and a heat treatment is provided after the gas treatment to selectively sublimate layer portions on side surfaces of the Si containing layers. The gas treatment and heat treatment are preferably in non-plasma environments. Thereafter, a plasma process is performed to form a protective layer on the Ge containing layers, and the Si containing layers can be etched with the plasma.

公开(公告)号：US20200176266A1

公开(公告)日：2020-06-04

申请号：US16787867

申请日：2020-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Subhadeep KAL ,  Nihar MOHANTY ,  Angelique D. RALEY ,  Aelan MOSDEN ,  Scott W. LEFEVRE

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.

公开(公告)号：US20240128088A1

公开(公告)日：2024-04-18

申请号：US17967298

申请日：2022-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshiki KANAKI ,  Subhadeep KAL ,  Aelan MOSDEN ,  lvo OTTO, IV ,  Masashi MATSUMOTO ,  Shinji IRIE

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30621 ,  H01L21/0245 ,  H01L21/02472

Abstract: Methods for selective etching of one layer or material relative to another layer or material adjacent thereto. In an example, a SiGe layer is etched relative to or selective to another silicon containing layer which either contains no germanium or geranium in an amount less than that of the target layer.