公开(公告)号：US20230360921A1

公开(公告)日：2023-11-09

申请号：US17964601

申请日：2022-10-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Matthew FLAUGH ,  Jonathan HOLLIN ,  Subhadeep KAL ,  Pingshan LUAN ,  Hamed HAJIBABAEINAJAFABADI ,  Yu-Hao TSAI ,  Aelan MOSDEN

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L29/42392

Abstract: Selective protection and etching is provided which can be utilized in etching of a silicon containing layer with respect to a Ge or SiGe layer. In an example, the layers are stacked, and an oxide is on a side surface of the layers. A treatment is utilized to provide a modified surface or termination surface on side surfaces of the Ge/SiGe layers, and a heat treatment is provided after the gas treatment to selectively sublimate layer portions on side surfaces of the Si containing layers. The gas treatment and heat treatment are preferably in non-plasma environments. Thereafter, a plasma process is performed to form a protective layer on the Ge containing layers, and the Si containing layers can be etched with the plasma.

公开(公告)号：US20240096639A1

公开(公告)日：2024-03-21

申请号：US17945897

申请日：2022-09-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jonathan HOLLIN ,  Matthew Flaugh ,  Subhadeep Kal ,  Aelan Mosden

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/67109

Abstract: A surface of a substrate is modified, where the substrate includes at least two different layers or films of different materials. The modified layer is then selectively converted to a protection layer on one of the layers, while the other layer is etched.