公开(公告)号：US20250096006A1

公开(公告)日：2025-03-20

申请号：US18964049

申请日：2024-11-29

Applicant: Tokyo Electron Limited

Inventor： Rin SASAKI ,  Masanori HOSOYA ,  Yuki CHIBA ,  Shun ITOH ,  Daisuke NISHIDE ,  Takatoshi ORUI ,  Yuto SAITO

IPC: H01L21/311 ,  H01J37/305 ,  H01J37/32

Abstract: A disclosed etching method includes (a) preparing a substrate in a chamber, (b) forming a deposit on the substrate, (c) supplying ions from a plasma generated from the process gas to the deposit to modify the deposit, and (d) etching the dielectric film by using a plasma after (c). The substrate includes a dielectric film and a mask. The deposit is supplied from a plasma generated from a process gas containing a gas component containing fluorine and carbon. A power level of a source radio frequency power in (c) is not higher than a power level of the source radio frequency power in (b). An electric bias has a level in (c) higher than a level of the electric bias in (b), or is not supplied in (b). A level of the electric bias in (d) is higher than the level of the electric bias in (c).