ETCHING METHOD AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20250096006A1

    公开(公告)日:2025-03-20

    申请号:US18964049

    申请日:2024-11-29

    Abstract: A disclosed etching method includes (a) preparing a substrate in a chamber, (b) forming a deposit on the substrate, (c) supplying ions from a plasma generated from the process gas to the deposit to modify the deposit, and (d) etching the dielectric film by using a plasma after (c). The substrate includes a dielectric film and a mask. The deposit is supplied from a plasma generated from a process gas containing a gas component containing fluorine and carbon. A power level of a source radio frequency power in (c) is not higher than a power level of the source radio frequency power in (b). An electric bias has a level in (c) higher than a level of the electric bias in (b), or is not supplied in (b). A level of the electric bias in (d) is higher than the level of the electric bias in (c).

    METHOD OF DETERMINING CLEANING CONDITIONS AND PLASMA PROCESSING DEVICE

    公开(公告)号:US20210111008A1

    公开(公告)日:2021-04-15

    申请号:US17060139

    申请日:2020-10-01

    Inventor: Shun ITOH

    Abstract: A method of determining cleaning conditions includes: processing a substrate under a substrate processing condition in a chamber, acquiring light emission intensity data by performing cleaning of an interior of the chamber based on cleaning conditions which are different from each other; and performing a step of evaluating the cleaning conditions based on the light emission intensity data, and a step of selecting the cleaning conditions based on the evaluation of the cleaning conditions.

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