公开(公告)号：US20250096006A1

公开(公告)日：2025-03-20

申请号：US18964049

申请日：2024-11-29

Applicant: Tokyo Electron Limited

Inventor： Rin SASAKI ,  Masanori HOSOYA ,  Yuki CHIBA ,  Shun ITOH ,  Daisuke NISHIDE ,  Takatoshi ORUI ,  Yuto SAITO

IPC: H01L21/311 ,  H01J37/305 ,  H01J37/32

Abstract: A disclosed etching method includes (a) preparing a substrate in a chamber, (b) forming a deposit on the substrate, (c) supplying ions from a plasma generated from the process gas to the deposit to modify the deposit, and (d) etching the dielectric film by using a plasma after (c). The substrate includes a dielectric film and a mask. The deposit is supplied from a plasma generated from a process gas containing a gas component containing fluorine and carbon. A power level of a source radio frequency power in (c) is not higher than a power level of the source radio frequency power in (b). An electric bias has a level in (c) higher than a level of the electric bias in (b), or is not supplied in (b). A level of the electric bias in (d) is higher than the level of the electric bias in (c).

公开(公告)号：US20220102159A1

公开(公告)日：2022-03-31

申请号：US17488322

申请日：2021-09-29

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Taihei MATSUHASHI ,  Masanori HOSOYA ,  Hiroie MATSUMOTO

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method includes: (a) providing a substrate including a silicon-containing film on a substrate support; (b) adjusting a temperature of the substrate support to −20° C. or lower; (c) supplying a processing gas including a nitrogen-containing gas, into the chamber; (d) etching the silicon-containing film by using plasma generated from the processing gas. A recess is formed by etching the silicon-containing film, and a by-product containing silicon and nitrogen adheres to a side wall of the recess. The etching method further includes (e) setting at least one etching parameter of the temperature of the substrate support and the flow rate of the nitrogen-containing gas included in the processing gas, to adjust the width of the bottom of the recess according to an adhesion amount of the by-product, before (b).

公开(公告)号：US20180233331A1

公开(公告)日：2018-08-16

申请号：US15896435

申请日：2018-02-14

Applicant: Tokyo Electron Limited

Inventor： Masanori HOSOYA ,  Soichiro KIMURA ,  Shinya MORIKITA

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01J37/32183 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/45523 ,  C23C16/509 ,  H01J37/32449 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/31116 ,  H01L21/768 ,  H01L21/76897

Abstract: A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by supplying a coating gas, including a carbon-containing gas, to an interior of the chamber to generate a plasma from the supplied coating gas, and coating the interior of the chamber with a carbon film using the plasma generated from the coating gas. The plasma processing method further includes performing an etching process after the coating process by supplying an etching gas, including a fluorocarbon-containing gas, to the interior of the chamber to generate a plasma from the supplied etching gas and etching a first silicon-containing film that is arranged on a second silicon-containing film covering an electrode formed on a workpiece using the plasma generated from the etching gas.

公开(公告)号：US20200135436A1

公开(公告)日：2020-04-30

申请号：US16557669

申请日：2019-08-30

Applicant: Tokyo Electron Limited

Inventor： Mitsuhiro IWANO ,  Masanori HOSOYA

IPC: H01J37/32

Abstract: In a cleaning method according to an exemplary embodiment, a plasma is formed from a cleaning gas in a chamber of a plasma processing apparatus. A focus ring is mounted on a substrate support in the chamber to extend around a central axis of the chamber. While the plasma is formed, a magnetic field distribution is formed in the chamber by an electromagnet. The magnetic field distribution has a maximum horizontal component in a location on the focus ring or a location outside the focus ring in a radial direction with respect to the central axis.