公开(公告)号：US20240393768A1

公开(公告)日：2024-11-28

申请号：US18668767

申请日：2024-05-20

Applicant: Tokyo Electron Limited

Inventor： Rintaro TAKAO

IPC: G05B19/4155 ,  H01L21/67

Abstract: A substrate processing apparatus having a plurality of process modules for processing a processing target, includes an input unit that receives an input of recipe information indicating a processing for the processing target; and a selection unit that selects the process module for processing the processing target based on a selection rule designated by a user.

公开(公告)号：US20210287920A1

公开(公告)日：2021-09-16

申请号：US17177382

申请日：2021-02-17

Applicant: Tokyo Electron Limited

Inventor： Rintaro TAKAO ,  Naohide ITO ,  Hiroaki DEWA ,  Masayuki KOZAWA

IPC: H01L21/677 ,  B65G49/07 ,  H01L21/68

Abstract: A semiconductor manufacturing apparatus includes one or more process modules, a scheduler, and a transfer controller. A product wafer of a lot that is transferred from a load port to one of the one or more process modules is replenished such that a total number of wafers that are simultaneously processed in the one or more process modules becomes N. When an advance lot being processed and a post lot to be processed subsequent to the advance lot have a same processing condition, the scheduler creates the transfer plan to replenish with the product wafer of the post lot instead of a dummy wafer such that the transfer controller transfers the product wafer and the dummy wafer to the one or more process modules according to the created transfer plan.

公开(公告)号：US20140187053A1

公开(公告)日：2014-07-03

申请号：US14138752

申请日：2013-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota GOTO ,  Rintaro TAKAO

IPC: H01L21/02

CPC classification number: C23C16/4405 ,  C23C16/4407 ,  H01L21/02041

Abstract: A method of cleaning a thin film forming apparatus wherein a process for supplying a film forming gas into a reaction tube of the thin film forming apparatus to form a thin film on an object to be processed is repeated more than one time and then a cleaning gas is supplied into the reaction tube to remove extraneous particles attached to an interior of the apparatus, the method comprising: a first cleaning process including supplying a first cleaning gas into the reaction tube to remove the extraneous particles attached to the interior of the apparatus when a first cleaning start conditions is satisfied; and a second cleaning process including performing a cleaning process that is different from the first cleaning process when a second cleaning start condition that is different from the first cleaning start condition is satisfied.

Abstract translation: 一种清洁薄膜形成装置的方法，其中将一种将成膜气体供应到薄膜形成装置的反应管中以在待处理物体上形成薄膜的方法重复多于一次，然后重复清洁气体 被供应到反应管中以去除附着到装置内部的外来颗粒，该方法包括：第一清洁过程，其包括将第一清洁气体供应到反应管中以除去附着到装置内部的外来颗粒 首先清洁启动条件得到满足; 以及第二清洗处理，包括当满足与第一清洗开始条件不同的第二清洗开始条件时，执行与第一清洁处理不同的清洁处理。