公开(公告)号：US20160293390A1

公开(公告)日：2016-10-06

申请号：US15080822

申请日：2016-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigehiro MIURA ,  Takeshi KOBAYASHI ,  Katsuaki SUGAWARA ,  Naohide ITO

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01J37/32972 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32935 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

Abstract: There is provided an apparatus of performing a plasma process on substrates mounted on an upper surface of a rotary table. The apparatus includes: a heater for heating the substrates; a process gas supply part for supplying a process gas toward the upper surface of the rotary table; an antenna for generating an inductively coupled plasma by converting the process gas to plasma; a light detection part for detecting respective light intensities of R, G and B component as light color components; a calculation part for obtaining an evaluation value corresponding to a change amount before and after supplying a high-frequency power to the antenna, with respect to at least one of the respective light intensities; and an ignition determination part for comparing the evaluation value with a threshold value and to determine that ignition of plasma is not generated if the evaluation value does not exceed the threshold value.

Abstract translation: 提供了对安装在旋转台的上表面上的基板上进行等离子体处理的装置。 该装置包括：用于加热基板的加热器; 处理气体供给部，其用于向所述转台的上表面供给处理气体; 用于通过将处理气体转换成等离子体来产生电感耦合等离子体的天线; 用于检测作为浅色分量的R，G和B分量的各个光强度的光检测部分; 相对于各个光强度中的至少一个，获得与向天线供给高频电力前后变化量对应的评价值的计算部; 以及点火确定部分，用于将评估值与阈值进行比较，并且如果评估值不超过阈值，则确定不产生等离子体的点燃。

公开(公告)号：US20140109833A1

公开(公告)日：2014-04-24

申请号：US14060182

申请日：2013-10-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naohide ITO ,  Keiji OSADA ,  Daisuke MORISAWA

IPC: H01L21/02

CPC classification number: H01L21/02617 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67276

Abstract: A substrate processing apparatus is provided with a process module including a processing container, a rotary table installed within the processing container, the rotary table having a plurality of placing regions to receive substrates, and a process gas supply unit supplying a process gas to the placing regions, a load port in which a transfer container is placed, a dummy substrate receiving unit, a transfer chamber including a transfer mechanism delivering the product substrates or the dummy substrates between the transfer container or the dummy substrate receiving unit and the rotary table, a setting unit setting a placing region to which one of the product substrates is to be transferred, and a control unit outputting a control signal such that the dummy substrates are carried into the remaining placing regions.

Abstract translation: 基板处理装置设置有处理模块，该处理模块包括处理容器，安装在处理容器内的旋转台，具有多个用于接收基板的放置区域的旋转台，以及向处理气体供给处理气体 区域，其中放置转移容器的负载端口，虚设基板接收单元，包括在转印容器或虚设基板接收单元和旋转台之间输送产品基板或虚设基板的转印机构的转印室， 设置单元设置要传送一个产品基板的放置区域，以及输出控制信号的控制单元，使得虚设基板被携带到剩余的放置区域中。

公开(公告)号：US20210287920A1

公开(公告)日：2021-09-16

申请号：US17177382

申请日：2021-02-17

Applicant: Tokyo Electron Limited

Inventor： Rintaro TAKAO ,  Naohide ITO ,  Hiroaki DEWA ,  Masayuki KOZAWA

IPC: H01L21/677 ,  B65G49/07 ,  H01L21/68

Abstract: A semiconductor manufacturing apparatus includes one or more process modules, a scheduler, and a transfer controller. A product wafer of a lot that is transferred from a load port to one of the one or more process modules is replenished such that a total number of wafers that are simultaneously processed in the one or more process modules becomes N. When an advance lot being processed and a post lot to be processed subsequent to the advance lot have a same processing condition, the scheduler creates the transfer plan to replenish with the product wafer of the post lot instead of a dummy wafer such that the transfer controller transfers the product wafer and the dummy wafer to the one or more process modules according to the created transfer plan.

公开(公告)号：US20160093520A1

公开(公告)日：2016-03-31

申请号：US14860251

申请日：2015-09-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naohide ITO ,  Daisuke MORISAWA ,  Keiji OSADA

IPC: H01L21/677 ,  C23C16/458 ,  H01L21/67 ,  C23C16/52 ,  H01L21/02 ,  H01L21/687

CPC classification number: C23C16/4584 ,  C23C16/52 ,  H01L21/02263 ,  H01L21/67201 ,  H01L21/67745

Abstract: Disclosed is a processing apparatus. The processing apparatus includes: a load port in which a conveyance container accommodating a plurality of semiconductor wafers is placed; a dummy wafer storage area in which a conveyance container accommodating a plurality of dummy wafers is placed; a normal-pressure conveyance room in which a first conveyance arm is installed; an equipment that processes the plurality of semiconductor wafers in a state where the semiconductor wafers and the dummy wafers which are conveyed are placed in slots, respectively; and a controller that controls each component of the processing apparatus. The controller classifies the dummy wafers accommodated in the conveyance container into a plurality of groups, and controls the first conveyance arm to preferentially convey the dummy wafers within one of the classified groups to the equipment and, in replacing the dummy wafers, to perform replacement of the dummy wafers group to group as classified.

Abstract translation: 公开了一种处理装置。 处理装置包括：装载有容纳多个半导体晶片的输送容器的装载口; 虚设晶片存储区域，其中放置容纳多个虚拟晶片的输送容器; 其中安装有第一输送臂的常压输送室; 在被输送的半导体晶片和虚拟晶片分别放置在槽中的状态下处理多个半导体晶片的设备; 以及控制器，其控制处理装置的每个部件。 控制器将容纳在输送容器中的虚拟晶片分成多个组，并且控制第一输送臂以优先地将分类组中的一个中的虚拟晶片传送到设备，并且在更换虚拟晶片时，执行更换 虚晶片组分组。

公开(公告)号：US20240093371A1

公开(公告)日：2024-03-21

申请号：US18244532

申请日：2023-09-11

Applicant: Tokyo Electron Limited

Inventor： Hiroaki DEWA ,  Satoshi MIZUNAGA ,  Naohide ITO

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/448 ,  C23C16/45561

Abstract: Provided is a method of supplying a liquid raw material to a gas supply device. The gas supply device includes: a storage tank that stores the liquid raw material; a heating unit that heats the liquid raw material to generate a raw material gas; a level detecting unit that detects a liquid surface level of the liquid raw material stored in the storage tank; a gas inlet and a gas outlet provided in the storage tank; and a raw material inlet provided in the storage tank. The method includes: determining whether the liquid surface level of the liquid raw material is equal to or lower than a supply target level; and repeating supply of a specified amount of liquid raw material to the storage tank a specified number of times when the liquid surface level of the liquid raw material is equal to or lower than the supply target level.

公开(公告)号：US20220372624A1

公开(公告)日：2022-11-24

申请号：US17747326

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Yohei MATSUMOTO ,  Naohide ITO ,  Takehiro FUKADA ,  Shinji ASARI

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/458

Abstract: A control apparatus is included in a film forming apparatus that includes: a rotation table disposed in a vacuum container and configured to rotate around a central shaft of a table surface, thereby revolving a substrate on a disposing surface provided on a part of the table surface; a stage configured to rotate around the central shaft of the disposing surface, thereby rotating the substrate on the disposing surface; and a gas supply unit configured to supply a gas into the vacuum container. The control apparatus includes: a display control unit configured to display a setting screen for setting a first parameter that controls a rotation of the substrate; and a process execution unit configured to form a film on the substrate while controlling the rotation of the substrate based on the set first parameter.