公开(公告)号：US20230230862A1

公开(公告)日：2023-07-20

申请号：US18153469

申请日：2023-01-12

Applicant: Tokyo Electron Limited

Inventor： Kiyoshi SUZUKI ,  Hiroshi HIROSE ,  Ryota GOTO ,  Koichi MIYASHITA

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/67201 ,  H01L21/67742 ,  H01L21/6719 ,  H01L21/6838 ,  H01L21/67259 ,  H01L21/67745

Abstract: A substrate transport method is employed in a substrate processing system including a plurality of processing chambers, a load lock chamber, a vacuum transport device provided in a vacuum transport chamber connecting the load lock chamber and the plurality of processing chambers and configured to simultaneously transport a plurality of substrates, and an atmospheric transport device provided in an atmospheric transport chamber and configured to transport a substrate from a carrier to the load lock chamber. The substrate transport method includes acquiring in advance a relative positional error for a case where the plurality of substrates are transported from the load lock chamber to the plurality of processing chambers and placed on a stage in the plurality of processing chambers, and placing the plurality of substrates on a stage in the load lock chamber, based on a transport path of the plurality of substrates and the relative positional error.

公开(公告)号：US20140187053A1

公开(公告)日：2014-07-03

申请号：US14138752

申请日：2013-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota GOTO ,  Rintaro TAKAO

IPC: H01L21/02

CPC classification number: C23C16/4405 ,  C23C16/4407 ,  H01L21/02041

Abstract: A method of cleaning a thin film forming apparatus wherein a process for supplying a film forming gas into a reaction tube of the thin film forming apparatus to form a thin film on an object to be processed is repeated more than one time and then a cleaning gas is supplied into the reaction tube to remove extraneous particles attached to an interior of the apparatus, the method comprising: a first cleaning process including supplying a first cleaning gas into the reaction tube to remove the extraneous particles attached to the interior of the apparatus when a first cleaning start conditions is satisfied; and a second cleaning process including performing a cleaning process that is different from the first cleaning process when a second cleaning start condition that is different from the first cleaning start condition is satisfied.

Abstract translation: 一种清洁薄膜形成装置的方法，其中将一种将成膜气体供应到薄膜形成装置的反应管中以在待处理物体上形成薄膜的方法重复多于一次，然后重复清洁气体 被供应到反应管中以去除附着到装置内部的外来颗粒，该方法包括：第一清洁过程，其包括将第一清洁气体供应到反应管中以除去附着到装置内部的外来颗粒 首先清洁启动条件得到满足; 以及第二清洗处理，包括当满足与第一清洗开始条件不同的第二清洗开始条件时，执行与第一清洁处理不同的清洁处理。