公开(公告)号：US20230022814A1

公开(公告)日：2023-01-26

申请号：US17814267

申请日：2022-07-22

Applicant: Tokyo Electron Limited

Inventor： Saya Inoue ,  Satoru Tanaka ,  Shinichiro Shimomura ,  Toru Ihara ,  Satoshi Biwa

IPC: H01L21/67

Abstract: A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.