公开(公告)号：US10679845B2

公开(公告)日：2020-06-09

申请号：US15443306

申请日：2017-02-27

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi ,  Satoshi Okamura ,  Satoshi Biwa

IPC: H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  H01L21/677 ,  B08B3/08 ,  H01L21/687

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate from an outside of the container body into the container body and holds the substrate inside the container body during the processing. A substrate support pin supporting a wafer and a cooling plate cooling the holding member are provided outside the container body.

公开(公告)号：US20170256398A1

公开(公告)日：2017-09-07

申请号：US15443306

申请日：2017-02-27

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi ,  Satoshi Okamura ,  Satoshi Biwa

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate from an outside of the container body into the container body and holds the substrate inside the container body during the processing. A substrate support pin supporting a wafer and a cooling plate cooling the holding member are provided outside the container body.

公开(公告)号：US12057327B2

公开(公告)日：2024-08-06

申请号：US18107935

申请日：2023-02-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masataka Gosho ,  Yuichi Douki ,  Satoshi Biwa ,  Satoshi Okamura ,  Katsuhiro Ookawa ,  Yuichiro Kunugimoto

IPC: H01L21/67 ,  B08B3/08 ,  B08B7/04 ,  H01L21/02 ,  H01L21/66 ,  H01L21/687

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B7/04 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/68764 ,  H01L22/12 ,  H01L22/20 ,  H01L21/67248

Abstract: There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

公开(公告)号：US11295965B2

公开(公告)日：2022-04-05

申请号：US16188671

申请日：2018-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei Yamada ,  Hiroaki Inadomi ,  Satoshi Biwa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/677 ,  B08B9/093 ,  B08B3/02

Abstract: A cleaning apparatus of a substrate processing apparatus according to an exemplary embodiment includes a nozzle and a scanner. The nozzle ejects a gas toward in an inner wall surface of a processing chamber in which a substrate is processed. The scanner causes the nozzle to scan along the inner wall surface of the processing chamber in the processing chamber.

公开(公告)号：US20180138060A1

公开(公告)日：2018-05-17

申请号：US15806481

申请日：2017-11-08

Applicant: Tokyo Electron Limited

Inventor： Satoshi Okamura ,  Satoshi Biwa

IPC: H01L21/67 ,  B08B7/00

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67748

Abstract: Disclosed is a substrate processing apparatus including: a container body configured to accommodate a substrate and perform a processing on the substrate using a high-pressure processing fluid; a conveyance port configured to carry the substrate into and out of the container body; an opening formed in the container body at a position different from the conveyance port; and a cover member configured to close the opening.

公开(公告)号：US20200168482A1

公开(公告)日：2020-05-28

申请号：US16690340

申请日：2019-11-21

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi ,  Satoshi Biwa ,  Satoshi Okamura

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus configured to perform a drying processing of drying substrates by using a processing fluid in a supercritical state includes a processing vessel and multiple holders. In the processing vessel, the drying processing is performed. The multiple holders are respectively configured to hold the substrates within the processing vessel.

公开(公告)号：US20170287742A1

公开(公告)日：2017-10-05

申请号：US15467001

申请日：2017-03-23

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Inadomi ,  Tooru Nakamura ,  Kouji Kimoto ,  Yasuo Kiyohara ,  Satoshi Okamura ,  Satoshi Biwa ,  Nobuya Yamamoto ,  Katsuhiro Ookawa ,  Keiichi Yahata ,  Tetsuro Nakahara

IPC: H01L21/67 ,  B08B3/08 ,  B08B3/02 ,  B08B3/10

Abstract: Provided is a substrate processing apparatus including a liquid processing unit that performs a liquid processing on a substrate; a drying processing unit that performs a drying processing on the substrate in a wet state; a first conveyance unit that conveys the substrate to the liquid processing unit; a second conveyance unit that conveys the substrate in the wet state from the liquid processing unit to the drying processing unit; and a third conveyance unit that conveys the substrate before the liquid processing in the liquid processing unit and to convey the substrate after the drying processing from the drying processing unit. The first and second conveyance units and the drying processing unit are disposed on a side that faces the third conveyance unit, and the liquid processing unit is disposed on a side that faces the first and second conveyance units and is opposite to the third conveyance unit.

公开(公告)号：US20170254589A1

公开(公告)日：2017-09-07

申请号：US15441864

申请日：2017-02-24

Applicant: Tokyo Electron Limited

Inventor： Gentaro Goshi ,  Hiromi Kiyose ,  Satoshi Biwa

IPC: F26B21/14 ,  H01L21/67 ,  H01L21/02 ,  F26B5/00 ,  F26B9/06

CPC classification number: F26B21/14 ,  F26B5/00 ,  F26B9/06 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: Provided is a substrate processing apparatus including a processing container configured to receive a substrate on which a dry preventing liquid is filled and perform a supercritical processing on the substrate; a fluid supply line connected to the processing container and configured to supply a processing fluid to the processing container; a fluid discharge line connected to the processing container and configured to discharge the processing fluid in the processing container; and a first circulation line connected to an upstream side and a downstream side of the processing container, and provided independently from the fluid supply line and the fluid discharge line to circulate the processing fluid in the processing container. The first circulation line is provided with a first reservoir tank that receives the processing fluid from the processing container and has a capacity larger than that of the processing container.

公开(公告)号：US20160148827A1

公开(公告)日：2016-05-26

申请号：US14943138

申请日：2015-11-17

Applicant: Tokyo Electron Limited

Inventor： Terufumi Wakiyama ,  Norihiro Ito ,  Jiro Higashijima ,  Satoshi Biwa

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/68728 ,  H01L21/67051

Abstract: A substrate processing system includes: a holding plate provided to be rotatable around a vertical axis; a substrate holding member provided on the holding plate to hold a substrate; a rotary drive unit that rotates the substrate in a predetermined direction; and a processing fluid supply unit that supplies a processing liquid to the substrate. The substrate holding member includes a first side portion provided at a position facing the substrate and a second side portion and a third side portion that are adjacent to the first side portion. The first side portion includes a gripping portion configured to grip an end surface of the substrate. The second side portion forms a pointed end portion with the first side portion, and includes a liquid flow guide portion that guides the processing liquid to a lower side of the substrate after the processing liquid is supplied to the substrate.

Abstract translation: 一种基板处理系统，包括：保持板，设置成可围绕垂直轴线旋转; 衬底保持构件，设置在所述保持板上以保持衬底; 旋转驱动单元，其使基板沿预定方向旋转; 以及将处理液供给到基板的处理液供给单元。 衬底保持构件包括设置在面向衬底的位置处的第一侧部和与第一侧部相邻的第二侧部和第三侧部。 第一侧部分包括构造成夹持基板的端面的夹持部分。 第二侧部分形成具有第一侧部分的尖端部分，并且包括在将处理液体供应到基板之后将处理液引导到基板的下侧的液体引导部分。

公开(公告)号：US20230022814A1

公开(公告)日：2023-01-26

申请号：US17814267

申请日：2022-07-22

Applicant: Tokyo Electron Limited

Inventor： Saya Inoue ,  Satoru Tanaka ,  Shinichiro Shimomura ,  Toru Ihara ,  Satoshi Biwa

IPC: H01L21/67

Abstract: A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.