公开(公告)号：US11798821B2

公开(公告)日：2023-10-24

申请号：US17072457

申请日：2020-10-16

Applicant: Tokyo Electron Limited

Inventor： Yukinobu Otsuka ,  Shinsuke Takaki ,  Yasuhiro Kuga ,  Koji Ushimaru ,  Ryohei Fujise

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  G03F7/16 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00

CPC classification number: H01L21/67109 ,  F27B17/0025 ,  F27B17/0083 ,  F27D3/0084 ,  F27D5/0037 ,  G03F7/168 ,  H01L21/6838 ,  H01L21/68742 ,  H05B1/0233 ,  H05B3/22

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.