公开(公告)号：US20190295864A1

公开(公告)日：2019-09-26

申请号：US16360357

申请日：2019-03-21

Applicant: Tokyo Electron Limited

Inventor： Masashi Itonaga ,  Koji Ushimaru

IPC: H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus includes: placing table on which a substrate to be processed is placed; suction mechanism including a pipe configured to apply a suction force to a rear surface of the substrate through one or a plurality of hole portions formed in the placing table to hold the substrate; and fluid supply source configured to discharge a fluid to one or a plurality of discharge portions formed in the placing table outward of the hole portions in the placing table and to form a horizontal airflow toward an outside of the substrate on a rear surface of the substrate.

公开(公告)号：US20190326150A1

公开(公告)日：2019-10-24

申请号：US16390079

申请日：2019-04-22

Applicant: Tokyo Electron Limited

Inventor： Koji Ushimaru ,  Masashi Itonaga

IPC: H01L21/683 ,  B25B11/00

Abstract: A substrate can be placed on a placing table horizontally. When placing the substrate on the placing table having multiple protrusions configured to support the substrate, the substrate is attracted to the placing table while performing a suction from a suction hole configured to attract a position, different from positions located above the protrusions, of the substrate placed on the placing table, and then, a suction force of the suction hole is reduced. Accordingly, it is possible to place the substrate on the placing table while correcting the flexure. Further, the substrate can be horizontally placed on the placing table since deformation of the wafer, caused by attracting a bottom surface of the wafer strongly, is suppressed.

公开(公告)号：US20250102918A1

公开(公告)日：2025-03-27

申请号：US18574492

申请日：2022-04-26

Applicant: Tokyo Electron Limited

Inventor： Koji Ushimaru ,  Kenji Iizuka ,  Kei Miyazaki ,  Yukinobu Otsuka

IPC: G03F7/40 ,  F27B17/00 ,  F27D7/02 ,  H01L21/027

Abstract: A substrate processing apparatus includes a hot plate configured to support a substrate having a film formed thereon and perform a heat treatment of heating the substrate; a chamber configured to cover the substrate supported by the hot plate; a gas discharger, having a head member provided with multiple discharge holes distributed along a surface facing the substrate supported by the hot plate, configured to discharge a gas toward a surface of the substrate from the multiple discharge holes; a peripheral exhaust device configured to evacuate a processing space within the chamber from an outer peripheral region outside a periphery of the substrate supported by the hot plate; and a controller. The controller controls the peripheral exhaust device to increase an exhaust amount from the peripheral exhaust device in a state that the substrate is heated.

公开(公告)号：US11798821B2

公开(公告)日：2023-10-24

申请号：US17072457

申请日：2020-10-16

Applicant: Tokyo Electron Limited

Inventor： Yukinobu Otsuka ,  Shinsuke Takaki ,  Yasuhiro Kuga ,  Koji Ushimaru ,  Ryohei Fujise

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  G03F7/16 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00

CPC classification number: H01L21/67109 ,  F27B17/0025 ,  F27B17/0083 ,  F27D3/0084 ,  F27D5/0037 ,  G03F7/168 ,  H01L21/6838 ,  H01L21/68742 ,  H05B1/0233 ,  H05B3/22

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

公开(公告)号：US11049758B2

公开(公告)日：2021-06-29

申请号：US16390079

申请日：2019-04-22

Applicant: Tokyo Electron Limited

Inventor： Koji Ushimaru ,  Masashi Itonaga

IPC: H01L21/683 ,  H01L21/687 ,  B25B11/00

Abstract: A substrate can be placed on a placing table horizontally. When placing the substrate on the placing table having multiple protrusions configured to support the substrate, the substrate is attracted to the placing table while performing a suction from a suction hole configured to attract a position, different from positions located above the protrusions, of the substrate placed on the placing table, and then, a suction force of the suction hole is reduced. Accordingly, it is possible to place the substrate on the placing table while correcting the flexure. Further, the substrate can be horizontally placed on the placing table since deformation of the wafer, caused by attracting a bottom surface of the wafer strongly, is suppressed.