公开(公告)号：US11581201B2

公开(公告)日：2023-02-14

申请号：US16820898

申请日：2020-03-17

申请人： Tokyo Electron Limited

发明人： Kazuteru Obara ,  Tatsuya Yamaguchi ,  Yasuaki Kikuchi ,  Ryuji Kusajima ,  Shinya Nasukawa ,  Kazuyuki Kikuchi

IPC分类号： H01L21/67 ,  C23C16/455 ,  H01L21/324 ,  H01L21/677 ,  C23C16/34

摘要： A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

公开(公告)号：US11302542B2

公开(公告)日：2022-04-12

申请号：US16737512

申请日：2020-01-08

申请人： TOKYO ELECTRON LIMITED

发明人： Masato Kadobe ,  Shinya Nasukawa ,  Hiromi Nitadori ,  Kazuyuki Kikuchi ,  Hirofumi Kaneko

IPC分类号： H01L21/67 ,  H01L21/677 ,  F27D5/00 ,  F27D7/06 ,  F27D9/00 ,  F27D3/00

摘要： A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

公开(公告)号：US20200303222A1

公开(公告)日：2020-09-24

申请号：US16820898

申请日：2020-03-17

申请人： Tokyo Electron Limited

发明人： Kazuteru Obara ,  Tatsuya Yamaguchi ,  Yasuaki Kikuchi ,  Ryuji Kusajima ,  Shinya Nasukawa ,  Kazuyuki Kikuchi

IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/34 ,  H01L21/677 ,  H01L21/324

摘要： A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.