公开(公告)号：US20220145451A1

公开(公告)日：2022-05-12

申请号：US17453528

申请日：2021-11-04

Applicant: Tokyo Electron Limited

Inventor： Shunji YAMAKAWA ,  Tadahiro ISHIZAKA ,  Kohichi SATOH ,  Masato ARAKI

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.

公开(公告)号：US20230377893A1

公开(公告)日：2023-11-23

申请号：US18027722

申请日：2021-09-15

Applicant: Tokyo Electron Limited

Inventor： Shunji YAMAKAWA ,  Tadahiro ISHIZAKA ,  Masato SAKAMOTO ,  Kohichi SATOH

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/18

CPC classification number: H01L21/28568 ,  H01L21/76879 ,  C23C16/18

Abstract: A method for manufacturing a semiconductor device that includes forming a ruthenium film on a conductive film formed on a substrate for manufacture of the semiconductor device, wherein the conductive film includes a metal that increases an electrical resistance between the conductive film and the ruthenium film by interfacial diffusion between the conductive film and the ruthenium film, and wherein the method comprises forming the ruthenium film on the conductive film by alternately repeating a plurality of times: forming a ruthenium thin film by supplying a ruthenium raw material gas to the substrate on which the conductive film is formed; and then supplying a boron compound gas to the ruthenium thin film.