公开(公告)号：US20220145451A1

公开(公告)日：2022-05-12

申请号：US17453528

申请日：2021-11-04

Applicant: Tokyo Electron Limited

Inventor： Shunji YAMAKAWA ,  Tadahiro ISHIZAKA ,  Kohichi SATOH ,  Masato ARAKI

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/52

Abstract: A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.

公开(公告)号：US20180366337A1

公开(公告)日：2018-12-20

申请号：US16000951

申请日：2018-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Motoko NAKAGOMI ,  Kohichi SATOH

IPC: H01L21/311 ,  H01L21/67

Abstract: A method of etching a film of a workpiece, which includes: measuring a second flow rate of a first gas based on an increase rate of an internal pressure of a first chamber in a state in which a valve is closed and the first gas is supplied into the first chamber at a first flow rate adjusted by a flow rate controller, and calibrating the flow rate controller using the measured second flow rate; supplying a second gas into the first chamber; exhausting the first chamber; supplying a mixed gas of the first and second gases into the first chamber with the workpiece not mounted on a stage; forming a reaction product from the film by supplying the mixed gas into the first chamber with the workpiece mounted on the stage; and removing the reaction product by heating the workpiece with the workpiece accommodated in a second chamber.

公开(公告)号：US20130137262A1

公开(公告)日：2013-05-30

申请号：US13684389

申请日：2012-11-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH

IPC: H01L21/48

CPC classification number: H01L21/4814 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber includes forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas and adsorbing a gas containing a material for nucleation onto a surface of the initial tungsten film. The film forming method further includes depositing a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film by supplying the WF6 gas and the H2 gas into the processing chamber.

Abstract translation: 在处理室中在减压气氛中加热衬底的同时在衬底的表面上形成钨膜的钨膜形成方法包括通过交替地重复供给WF6来在衬底的表面上形成用于钨成核的初始钨膜 作为钨原料的气体和在处理室中作为还原气体的H2气体的供给，同时在处理室中在WF 6气体和H 2气体的供给之间进行吹扫并吸附含有成核材料的气体 到初始钨膜的表面上。 成膜方法还包括通过将WF 6气体和H 2气体供应到处理室中来沉积用于阻挡初始钨膜的结晶度的结晶阻挡钨膜。

公开(公告)号：US20200095680A1

公开(公告)日：2020-03-26

申请号：US16574977

申请日：2019-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH ,  Toshiaki FUJISATO ,  Daisuke TORIYA

IPC: C23C16/458

Abstract: A placement apparatus is provided in the present disclosure. The apparatus includes a stage on which a substrate is placed; a support configured to support the stage from a side of a rear surface of the stage that is opposite to a placement surface on which the substrate is placed; a temperature adjustment member including a plate securing the stage from a lower surface of the stage, a shaft extending downwards from the plate, and a hole accommodating the support through the shaft from the plate, and being capable of a temperature adjustment; a heat-insulating member disposed between the stage and the temperature adjustment member; and an abutment member configured to abut the substrate placed on the stage.

公开(公告)号：US20180102244A1

公开(公告)日：2018-04-12

申请号：US15722343

申请日：2017-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH ,  Shinya OKABE ,  Nagayasu HIRAMATSU ,  Motoko NAKAGOMI ,  Yuji KOBAYASHI

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45512 ,  C23C16/45536 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/26 ,  H01J37/32 ,  H01J2237/3321 ,  H01L21/02274

Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.

公开(公告)号：US20150187593A1

公开(公告)日：2015-07-02

申请号：US14579262

申请日：2014-12-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kensaku NARUSHIMA ,  Kohichi SATOH ,  Motoko NAKAGOMI ,  Eiichi KOMORI ,  Taiki KATOU

IPC: H01L21/306 ,  H01L21/67

CPC classification number: H01L21/30604 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/76814 ,  H01L21/76897

Abstract: There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.

Abstract translation: 在氮化硅膜和形成在被处理基板表面上的氧化硅膜之间有选择性地蚀刻氧化硅膜的方法，该方法包括：在真空气氛下，间歇地供给第一处理 将由氟化氢气体和氨气组成的气体和由氮，氢和氟化合物构成的第二处理气体加入到待加工的基板上。

公开(公告)号：US20230090881A1

公开(公告)日：2023-03-23

申请号：US17932341

申请日：2022-09-15

Applicant: Tokyo Electron Limited

Inventor： Masato ARAKI ,  Tadahiro ISHIZAKA ,  Kohichi SATOH

IPC: C23C16/16 ,  C23C16/56

Abstract: A film-forming method of embedding ruthenium in a substrate having a recess includes: (a) providing the substrate in a processing container; (b) supplying a gas containing a ruthenium raw material gas into the processing container to form a ruthenium layer; (c) annealing the ruthenium layer; and (d) supplying a gas containing an ozone gas into the processing container to etch the ruthenium layer, wherein (b), (c), and (d) are repeatedly executed in this order.

公开(公告)号：US20210054503A1

公开(公告)日：2021-02-25

申请号：US16996426

申请日：2020-08-18

Applicant: Tokyo Electron Limited

Inventor： Masato ARAKI ,  Kohichi SATOH ,  Tadahiro ISHIZAKA ,  Takashi SAKUMA

IPC: C23C16/40 ,  C23C16/52

Abstract: There is provided a substrate processing method which includes placing a substrate on a stage provided inside a processing container, and forming a ruthenium film on the substrate, wherein forming the ruthenium film includes repeating a cycle including: supplying a ruthenium-containing gas and a CO gas into the processing container; and stopping the supply of the ruthenium-containing gas and the CO gas into the processing container and exhausting a gas within the processing container.

公开(公告)号：US20200083098A1

公开(公告)日：2020-03-12

申请号：US16556977

申请日：2019-08-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi SATOH ,  Tadahiro ISHIZAKA

IPC: H01L21/768 ,  C23C16/06 ,  C23C16/46 ,  C23C16/02

Abstract: An embedding method includes: supplying a ruthenium-containing gas to a process chamber; and embedding ruthenium in a recess, which is formed in an insulating layer formed on a substrate, starting from a bottom portion of the recess using the ruthenium-containing gas, the bottom portion of the recess having a metal layer.

公开(公告)号：US20240153818A1

公开(公告)日：2024-05-09

申请号：US18550177

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Masato SAKAMOTO ,  Tadahiro ISHIZAKA ,  Issei TAKEYASU ,  Kohichi SATOH

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/16 ,  C23C16/448 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/76877 ,  C23C16/0227 ,  C23C16/16 ,  C23C16/4481 ,  C23C16/46 ,  C23C16/52

Abstract: An embedding method includes: preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess; embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature; and embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature.