公开(公告)号：US20240363405A1

公开(公告)日：2024-10-31

申请号：US18634671

申请日：2024-04-12

申请人： Tokyo Electron Limited

发明人： Masato SAKAMOTO ,  Tadahiro ISHIZAKA

IPC分类号： H01L21/768 ,  C23C16/02 ,  C23C16/06 ,  C23C16/52 ,  H01J37/32

CPC分类号： H01L21/76862 ,  C23C16/0227 ,  C23C16/06 ,  C23C16/52 ,  H01J37/32137 ,  H01J37/32449 ,  H01J37/32568 ,  H01L21/7685 ,  H01L21/76867 ,  H01L21/76877 ,  H01J2237/335

摘要： Provided is a substrate processing method for processing a substrate including a metal layer, the method comprising: supplying a halogen-containing gas to the substrate and reducing a metal oxide film formed on a surface of the metal layer; and supplying a reducing gas to the substrate and decreasing a residue remaining on the metal layer by supplying the halogen-containing gas.

公开(公告)号：US20240153818A1

公开(公告)日：2024-05-09

申请号：US18550177

申请日：2022-03-09

申请人： Tokyo Electron Limited

发明人： Masato SAKAMOTO ,  Tadahiro ISHIZAKA ,  Issei TAKEYASU ,  Kohichi SATOH

IPC分类号： H01L21/768 ,  C23C16/02 ,  C23C16/16 ,  C23C16/448 ,  C23C16/46 ,  C23C16/52

CPC分类号： H01L21/76877 ,  C23C16/0227 ,  C23C16/16 ,  C23C16/4481 ,  C23C16/46 ,  C23C16/52

摘要： An embedding method includes: preparing a substrate including an insulating film formed with a recess and a metal film exposed from a bottom of the recess; embedding a first ruthenium film from the bottom of the recess to a middle of the recess by CVD using a ruthenium-containing gas while heating the substrate to a first temperature; and embedding a second ruthenium film over the first ruthenium film in the recess by CVD using the ruthenium-containing gas while heating the substrate to a second temperature lower than the first temperature.

公开(公告)号：US20230377893A1

公开(公告)日：2023-11-23

申请号：US18027722

申请日：2021-09-15

申请人： Tokyo Electron Limited

发明人： Shunji YAMAKAWA ,  Tadahiro ISHIZAKA ,  Masato SAKAMOTO ,  Kohichi SATOH

IPC分类号： H01L21/285 ,  H01L21/768 ,  C23C16/18

CPC分类号： H01L21/28568 ,  H01L21/76879 ,  C23C16/18

摘要： A method for manufacturing a semiconductor device that includes forming a ruthenium film on a conductive film formed on a substrate for manufacture of the semiconductor device, wherein the conductive film includes a metal that increases an electrical resistance between the conductive film and the ruthenium film by interfacial diffusion between the conductive film and the ruthenium film, and wherein the method comprises forming the ruthenium film on the conductive film by alternately repeating a plurality of times: forming a ruthenium thin film by supplying a ruthenium raw material gas to the substrate on which the conductive film is formed; and then supplying a boron compound gas to the ruthenium thin film.