公开(公告)号：US20160126063A1

公开(公告)日：2016-05-05

申请号：US14933911

申请日：2015-11-05

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Tatsui MATSUDO ,  Chishio KOSHUMIZU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32651

Abstract: A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed.

Abstract translation: 等离子体处理装置包括等离子体产生单元，其被配置为通过感应耦合将供给到处理室中的处理气体转换为等离子体。 等离子体产生单元包括由通过电介质窗设置在与处理室相邻的涡流线圈的第一高频天线，具有固有谐振频率的第二高频天线，并且由设置在外周侧或内周侧的涡流线圈形成 以及阻抗调整单元，用于调整从高频电源向第一高频天线观察的电路的谐振频率。 从高频电源朝向第一高频天线观察的电路被配置为具有两个谐振频率，这取决于当高频功率的频率改变时阻抗调节单元的调整。