公开(公告)号：US20240331977A1

公开(公告)日：2024-10-03

申请号：US18671410

申请日：2024-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Satoru KAWAKAMI ,  Tsuyoshi MORIYA ,  Tatsuo MATSUDO ,  Jun YAMAWAKU ,  Hiroyuki ONODA

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32174 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A dividing plate has insulating properties, and divides the inside of a processing vessel into a reaction chamber in which a body to be processed is placed, and a plasma generating chamber for generating plasma. Further, the dividing plate is provided, on a surface thereof on the side of the plasma generating chamber, with a first electrode, and a plurality of through holes for supplying active species included in the plasma generated in the plasma generating chamber to the reaction chamber. The second electrode is disposed facing the first electrode in the plasma generating chamber. When plasma is to be generated in the plasma generating chamber, an electric power supply unit supplies either the first electrode or the second electrode with high-frequency electric power in which high-frequency electric power in a plurality of frequencies is superimposed by phase control.

公开(公告)号：US20230250530A1

公开(公告)日：2023-08-10

申请号：US18014884

申请日：2021-06-30

Applicant: Tokyo Electron Limited

Inventor： Takamichi KIKUCHI ,  Jun YAMAWAKU ,  Tatsuo MATSUDO

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/505 ,  C23C16/44 ,  C23C16/52

CPC classification number: C23C16/45536 ,  C23C16/08 ,  C23C16/505 ,  C23C16/4408 ,  C23C16/52

Abstract: A film forming method of forming a metallic titanium film on a substrate, includes: a process of forming the metallic titanium film by an atomic layer deposition (plasma enhanced ALD) method that alternately performs an adsorption operation of adsorbing a raw material gas onto a surface of the substrate by supplying the raw material gas into a processing container in which the substrate is accommodated, and a reaction operation of supplying a reactive gas into the processing container to plasmarize the reactive gas and causing the plasmarized reactive gas to react with the raw material gas adsorbed onto the surface of the substrate, wherein, in the reaction operation, the reactive gas is plasmarized with radio frequency power having a frequency of 38 MHz or more and 60 MHz or less.

公开(公告)号：US20230230809A1

公开(公告)日：2023-07-20

申请号：US17928762

申请日：2021-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32449 ,  H01J37/32577 ,  H01J37/32422 ,  H01J37/32541 ,  H01J2237/3345 ,  H01J2237/3321

Abstract: There is provided a plasma processing device comprising: a chamber; an upper electrode; a showerhead provided below the upper electrode, which divides an internal space of the chamber into a first space between the upper electrode and the showerhead and a second space below the showerhead, and provides a plurality of introduction ports for introducing a gas into the second space and a plurality of openings penetrating the showerhead so that the first space and the second space are in communication with each other; a substrate support portion configured to support a substrate in the second space; an ion trap provided between the upper electrode and the showerhead, wherein the ion trap provides a plurality of through holes arranged not to align with the plurality of openings of the showerhead; a first gas supply portion configured to supply a gas to a region in the first space between the upper electrode and the ion trap; a second gas supply portion configured to supply the showerhead with a gas to be introduced from the plurality of introduction ports into the second space; a power source configured to produce a power for generating plasma, and connected to the upper electrode; and a switch configured to switchably connect the showerhead to one of a ground and the upper electrode.

公开(公告)号：US20220277932A1

公开(公告)日：2022-09-01

申请号：US17632056

申请日：2020-07-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/505

Abstract: There is provided a plasma processing device. The plasma processing device comprises: a chamber accommodating a stage on which a substrate is placed; an antenna disposed outside the chamber; a dielectric window disposed between the chamber and the antenna; a gas supply unit configured to supply a process gas into the chamber; a power supply unit configured to supply high-frequency power to the antenna to supply high-frequency waves into the chamber through the dielectric window and generate plasma from the process gas in the chamber; an electron generation unit configured to generate electrons in the chamber by excitation of the process gas supplied into the chamber; and a control device configured to control the power supply unit so as to supply the high-frequency power to the antenna simultaneously with the start of the excitation of the process gas by the electron generation unit or after the excitation of the process gas by the electron generation unit is started.

公开(公告)号：US20200312626A1

公开(公告)日：2020-10-01

申请号：US16825077

申请日：2020-03-20

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/455

Abstract: A film forming apparatus includes a high-frequency power supply capable of changing a frequency and a matcher for matching an internal impedance of the high-frequency power supply and a load impedance of a load including plasma. The matcher includes a capacitor having a fixed electrostatic capacitance and connected in series with the load. When the high-frequency power supply starts to supply a high-frequency power at a first frequency, the high-frequency power supply sweeps the frequency of the high-frequency power to be supplied such that reflected waves from the load are minimized. When it is determined that plasma is ignited, the high-frequency power supply changes the frequency of the high-frequency power to be supplied, from a second frequency at which plasma is ignited to a third frequency at which plasma is maintained, and instructs the matcher to perform an adjustment such that the reflected waves are minimized at the third frequency.

公开(公告)号：US20190221405A1

公开(公告)日：2019-07-18

申请号：US16368060

申请日：2019-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32541 ,  H01J37/32568

Abstract: Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

公开(公告)号：US20180308662A1

公开(公告)日：2018-10-25

申请号：US16002196

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Masashi SAITO ,  Kazuki DENPOH ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

公开(公告)号：US20250140527A1

公开(公告)日：2025-05-01

申请号：US19005718

申请日：2024-12-30

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/3205

Abstract: A radical supply apparatus for supplying radicals of a processing gas for processing a substrate comprises a housing divided into a radical generation space and a power supply space, a power supply coil provided in the power supply space, a catalyst coil that is disposed in the radical generation space at a position facing the power supply coil and configured to act as a metal catalyst when heated by non-contact power supply from the power supply coil, and a catalyst placing table disposed in the radical generation space, on which the catalyst coil is placed, and having a regulation member configured to regulate displacement of the catalyst coil, which is thermally expanded by heating, from the position facing the power supply coil. The radicals of the processing gas are generated by contacting the processing gas with the heated catalyst coil, and are supplied to a space for processing the substrate.

公开(公告)号：US20240229238A9

公开(公告)日：2024-07-11

申请号：US18275359

申请日：2022-01-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32449 ,  H01J2237/3321

Abstract: [Solution] A device according to the present disclosure comprises: a plasma generation chamber that is provided with a plasma generation mechanism for activating a second processing gas, when forming a film on a substrate by supplying each of a first processing gas, a substitution gas, the plasma-activated second processing gas, and the substitution gas, in order and by turns, to a processing vessel in which an interior processing space is evacuated so as to become a vacuum atmosphere; an evacuation mechanism that evacuates the plasma generation chamber; and a supply destination changing valve that is provided on an evacuation path connecting the plasma generation chamber and the evacuation mechanism, and opens and closes such that the supply destination of the plasma-activated second processing gas switches between a downstream side of the evacuation path, and the processing space.

公开(公告)号：US20160172160A1

公开(公告)日：2016-06-16

申请号：US15008064

申请日：2016-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Masashi SAITO ,  Kazuki DENPOH ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。 第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。