公开(公告)号：US10151031B2

公开(公告)日：2018-12-11

申请号：US15617102

申请日：2017-06-08

申请人： Tokyo Electron Limited

发明人： Hitoshi Kato ,  Jun Sato ,  Masahiro Murata ,  Kentaro Oshimo ,  Tomoko Sugano ,  Shigehiro Miura

IPC分类号： H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  C23C16/507 ,  C23C16/52

摘要： A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

公开(公告)号：US09714467B2

公开(公告)日：2017-07-25

申请号：US14613656

申请日：2015-02-04

申请人： Tokyo Electron Limited

发明人： Hitoshi Kato ,  Jun Sato ,  Masahiro Murata ,  Kentaro Oshimo ,  Tomoko Sugano ,  Shigehiro Miura

IPC分类号： C23C16/458 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/507

CPC分类号： C23C16/4584 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/507 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.